ZXTN2011G Todos los transistores

 

ZXTN2011G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXTN2011G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 3 W
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 6 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 130 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar ZXTN2011G

 

ZXTN2011G Datasheet (PDF)

 ..1. Size:447K  diodes
zxtn2011g.pdf

ZXTN2011G
ZXTN2011G

ZXTN2011G Green100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BVCEO > 100V Case: SOT223 IC = 6A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. ICM = 10A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(sat)

 6.1. Size:250K  diodes
zxtn2011z.pdf

ZXTN2011G
ZXTN2011G

A Product Line ofDiodes IncorporatedGreen ZXTN2011Z100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 100V Case: SOT89 IC = 4.5A high Continuous Current Case material: molded plastic. Green molding compound. ICM = 10A Peak Pulse Current UL Flammability Rating 94V-0 RCE(sat) = 31m for a low equivalent On

 7.1. Size:483K  diodes
zxtn2010g.pdf

ZXTN2011G
ZXTN2011G

ZXTN2010G Green60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR SOT223 Features Mechanical Data BVCEO > 60V Case: SOT223 IC = 6A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 20A Peak Pulse Current UL Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

 7.2. Size:507K  diodes
zxtn2018f.pdf

ZXTN2011G
ZXTN2011G

ZXTN2018F60V, SOT23, NPN medium power transistorSummaryV(BR)CEV > 140V, V(BR)CEO > 60VIC(cont) = 5A RCE(sat) = 25 m typicalVCE(sat)

 7.3. Size:119K  diodes
zxtn2010a.pdf

ZXTN2011G
ZXTN2011G

ZXTN2010A60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINESUMMARYBVCEO = 60V : RSAT = 34m ; IC = 4.5ADESCRIPTIONPackaged in the E-line outline this new low saturation 60V NPN transistoroffers extremely low on state losses making it ideal for use in DC-DC circuitsand various driving and power management functions.FEATURESE-LINE Extemely low equivalent on-resistance;

 7.4. Size:420K  diodes
zxtn2010z.pdf

ZXTN2011G
ZXTN2011G

ZXTN2010Z Green60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data BVCEO > 60V Case: SOT89 IC = 5A High Continuous Current Case Material: Molded Plastic. Green Molding Compound. UL RSAT = 30m for a Low Equivalent On-Resistance Flammability Rating 94V-0 Low Saturation Voltage VCE(SAT)

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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History: PBSS4250X

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