2N5497 Todos los transistores

 ..1. Size:106K  inchange semiconductor
 2n5497.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5497 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 70V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.1. Size:70K  central
 2n5490 2n5492 2n5494 2n5496.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.2. Size:237K  cdil
 2n5496.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTOR 2N5496 TO-220 Plastic Package Medium Power Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION VALUE UNIT Collector Base Voltage (Open emitter) VCBO 90 V Collector Emitter Voltage(open base) VCEO 70 V Collector Emitter Voltage(Vbe=1.5

 9.3. Size:95K  jmnic
 2n5498.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain and low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers,

 9.4. Size:118K  jmnic
 2n5490 2n5492 2n5494 2n5496.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

 9.5. Size:58K  inchange semiconductor
 2n5490.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5490 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.6. Size:106K  inchange semiconductor
 2n5492.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5492 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 55V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.7. Size:143K  inchange semiconductor
 2n5493.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5493 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 55V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output s

 9.8. Size:106K  inchange semiconductor
 2n5495.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5495 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output sta

 9.9. Size:116K  inchange semiconductor
 2n5498.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain Low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid

 9.10. Size:58K  inchange semiconductor
 2n5491.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5491 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Saturation Voltage- VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output

 9.11. Size:120K  inchange semiconductor
 2n5490 2n5492 2n5494 2n5496.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI