2N5497
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
   Número de Parte: 2N5497
   Material: Si
   Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
   Disipación total del dispositivo (Pc): 50
 W
   Tensión colector-base (Vcb): 90
 V
   Tensión colector-emisor (Vce): 80
 V
   Tensión emisor-base (Veb): 5
 V
   Corriente del colector DC máxima (Ic): 7
 A
   Temperatura operativa máxima (Tj): 150
 °C
CARACTERÍSTICAS ELÉCTRICAS
   Transición de frecuencia (ft): 0.8
 MHz
   Ganancia de corriente contínua (hfe): 20
		   Paquete / Cubierta: 
TO220
				
				  
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2N5497
 Datasheet (PDF)
 ..1.  Size:106K  inchange semiconductor
 2n5497.pdf 
						 
 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5497 DESCRIPTION Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 70V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output 
 9.2.  Size:237K  cdil
 2n5496.pdf 
						 
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTOR 2N5496TO-220Plastic PackageMedium Power Switching and Amplifier ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION VALUE UNITCollector Base Voltage (Open emitter) VCBO 90 VCollector Emitter Voltage(open base) VCEO 70 VCollector Emitter Voltage(Vbe=1.5
 9.3.  Size:95K  jmnic
 2n5498.pdf 
						 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain and low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head  positioners and other linearapplications. These devices can also be used in power switching circuits such as relay or solenoid drivers, 
 9.4.  Size:118K  jmnic
 2n5490 2n5492 2n5494 2n5496.pdf 
						 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS
 9.5.  Size:58K  inchange semiconductor
 2n5490.pdf 
						 
 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5490 DESCRIPTION Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output 
 9.6.  Size:106K  inchange semiconductor
 2n5492.pdf 
						 
 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5492 DESCRIPTION Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output 
 9.7.  Size:143K  inchange semiconductor
 2n5493.pdf 
						 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5493 DESCRIPTION Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 55V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.5A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output s
 9.8.  Size:106K  inchange semiconductor
 2n5495.pdf 
						 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5495 DESCRIPTION Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output sta
 9.9.  Size:116K  inchange semiconductor
 2n5498.pdf 
						 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5498 DESCRIPTION With TO-3 package High DC current gain Low saturation voltage High Safe Operating Area APPLICATIONS Designed for high power audio, disk head  positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
 9.10.  Size:58K  inchange semiconductor
 2n5491.pdf 
						 
 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5491 DESCRIPTION Collector-Emitter Sustaining Voltage-  : VCEO(SUS)= 40V(Min) Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output 
 9.11.  Size:120K  inchange semiconductor
 2n5490 2n5492 2n5494 2n5496.pdf 
						 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5490 2N5492 2N5494 2N5496 DESCRIPTION With TO-220 package High power dissipation APPLICATIONS For used in medium power and amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI
Otros transistores... 2N549
, 2N5490
, 2N5491
, 2N5492
, 2N5493
, 2N5494
, 2N5495
, 2N5496
, 2N2222A
, 2N5498
, 2N55
, 2N550
, 2N551
, 2N552
, 2N5525
, 2N5526
, 2N5527
. 
History: BF642W