ZXTP2039F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Búsqueda de reemplazo de transistor bipolar ZXTP2039F

ZXTP2039F Datasheet (PDF)

1.1. zxtp2039f.pdf Size:155K _diodes

ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V(BR)CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it ideal for power MOSFET gate driving and low loss power switching. Features ■ Low saturation vol

4.1. zxtp2008z.pdf Size:114K _diodes

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. SOT89 FEATURES • 5.5 amps continuous current •

4.2. zxtp2008g.pdf Size:115K _diodes

ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -30V : RSAT = 31m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 5.5 Amps continuous current • Up to 20 amps pe

 4.3. zxtp2013z.pdf Size:95K _diodes

ZXTP2013Z 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • 3.5 amps continuous current SOT89 �

4.4. zxtp2014z.pdf Size:111K _diodes

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES • 3 amps continuous current SOT89 • U

 4.5. zxtp2009z.pdf Size:126K _diodes

ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES SOT89 • Extremely low equivale

4.6. zxtp2041f.pdf Size:215K _diodes

A Product Line of Diodes Incorporated ZXTP2041F 40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR Features Mechanical Data • V(BR)CEO > -40V • Case: SOT23 • High current capability IC = -1A • Moisture Sensitivity: Level 1 per J-STD-020 • Low saturation voltage VCE(sat) < -500mV @ -1A • UL Flammability Rating 94V-0 • “Lead Free”, RoHS Compliant (Note 1) • Termina

4.7. zxtp2006e6.pdf Size:94K _diodes

ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT23-6 • 3.5 Amps continuous current • Extre

4.8. zxtp2012z.pdf Size:125K _diodes

ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -60V : RSAT = 32m ; IC = -4.3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES SOT89 • Extremely low equivalent on-resis

4.9. zxtp2027f.pdf Size:433K _diodes

ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V(BR)CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ra

4.10. zxtp2013g.pdf Size:125K _diodes

ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 5 amps continuous current • Up

4.11. zxtp2014g.pdf Size:114K _diodes

ZXTP2014G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -140V : RSAT = 92m ; IC = -4A DESCRIPTION Packaged in the SOT223 outline this new low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • 4 amps continuous current • Up

4.12. zxtp2012a.pdf Size:116K _diodes

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BVCEO = -60V : RSAT = 38m ; IC = -3.5A DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES E-line • 3.5 amps continuous current • Up

4.13. zxtp2012g.pdf Size:127K _diodes

ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES SOT223 • Extremely low equivalent on-resistan

4.14. zxtp2029f.pdf Size:432K _diodes

ZXTP2029F 100V, SOT23, PNP medium power transistor Summary V(BR)CEV > -130V, V(BR)CEO > -100V IC(cont) = -3A RCE(sat) = 45m typical VCE(sat) < -80mV @ -1A PD = 1.2W Complementary part number ZXTN2020F Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ra

4.15. zxtp2014z.pdf Size:962K _kexin

SMD Type Transistors PNP Transistors ZXTP2014Z (KXTP2014Z) ■ Features 1.70 0.1 ● 3 amps continuous current ● Up to 10 amps peak current ● Very low saturation voltages ● Marking: 955 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCE

4.16. zxtp2013.pdf Size:1115K _kexin

SMD Type Transistors PNP Transistors ZXTP2013 (KXTP2013) Unit:mm SOT-223 6.50±0.2 3.00±0.1 ■ Features 4 ● 5 A continuous current ● Up to 10 A peak current ● Very low saturation voltages 1 2 3 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70±0.1 3.Emitter 4.60 (typ) 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Colle

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21D | Q3-2 | 3DD13005MD-O-Z-N-C | 3DD13005MD-O-HF-N-B | ST2310DHI | ST2310HI | LM4158D | HLD128D | 9015M-D | 9015M-C | 9015M-B | 9014M-D | 9014M-C | 9014M-B | 2T837E | 2T837D | 2T837G | 2T837V | 2T837B | SS8550-J | SS8550-H