FJA4213. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

FJA4213 datasheet

..1. Size:93K fairchild semi
fja4213.pdf pdf_icon

FJA4213 Audio Power Amplifier High Current Capability IC = -15A High Power Dissipation Wide S.O.A Complement to FJA4313 TO-3P 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Ba

..2. Size:478K fairchild semi
2sa1962 fja4213.pdf pdf_icon

January 2009 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = -17A TO-3P High Power Dissipation 130watts 1 High Frequency 30MHz. 1.Base 2.Collector 3.Emitter High Voltage VCEO= -250V Wide S.O.A for reliable operation. Excel

0.1. Size:560K onsemi
2sa1962rtu 2sa1962otu fja4213rtu fja4213otu.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:200K fairchild semi
fja4210.pdf pdf_icon

October 2008 FJA4210 PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -1