FJA4313. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

FJA4313 datasheet

..1. Size:83K fairchild semi
fja4313.pdf pdf_icon

FJA4313 Audio Power Amplifier High Current Capability IC=15A High Power Dissipation Wide S.O.A Complement to FJA4213 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base

..2. Size:468K fairchild semi
2sc5242 fja4313.pdf pdf_icon

January 2009 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability IC = 17A TO-3P 1 High Power Dissipation 130watts 1.Base 2.Collector 3.Emitter High Frequency 30MHz. High Voltage VCEO=250V Wide S.O.A for reliable operation. Excelle

..3. Size:550K onsemi
2sc5242 fja4313.pdf pdf_icon

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:199K fairchild semi
fja4310.pdf pdf_icon

October 2008 FJA4310 NPN Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V