FJN3303F Todos los transistores

 ..1. Size:186K  fairchild semi
 fjn3303f.pdf

December 2009 FJN3303F High Voltage Fast-Switching NPN Power Transistor Features High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger Green packaging TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emit

 ..2. Size:232K  onsemi
 fjn3303f.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:36K  fairchild semi
 fjn3303r.pdf

FJN3303R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K , R2=22K ) Complement to FJN4303R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO

 7.2. Size:438K  fairchild semi
 fjn3303.pdf

May 2005 FJN3303 High Voltage Fast-Switching NPN Power Transistor High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Charger TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings TC = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base

 8.1. Size:37K  fairchild semi
 fjn3307r.pdf

FJN3307R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22K , R2=47K ) Complement to FJN4307R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC

 8.2. Size:69K  fairchild semi
 fjn3305r.pdf

FJN3305R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to FJN4305R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC

 8.3. Size:69K  fairchild semi
 fjn3301r.pdf

FJN3301R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=4.7K ) Complement to FJN4301R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units

 8.4. Size:65K  fairchild semi
 fjn3304r.pdf

FJN3304R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit Driver Circuit, Built in bias Resistor (R1=47K , R2=47K ) Complement to FJN4304R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCB

 8.5. Size:36K  fairchild semi
 fjn3308r.pdf

FJN3308R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47K , R2=22K ) Complement to FJN4308R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VC

 8.6. Size:37K  fairchild semi
 fjn3302r.pdf

FJN3302R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K , R2=10K ) Complement to FJN4302R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCB

 8.7. Size:33K  fairchild semi
 fjn3309r.pdf

FJN3309R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7K ) Complement to FJN4309R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VCBO Collector

 8.8. Size:70K  fairchild semi
 fjn3306r.pdf

FJN3306R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10K , R2=47K ) Complement to FJN4306R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C VC