KSC5338D Todos los transistores

 ..1. Size:388K  fairchild semi
 ksc5338d.pdf

May 2010 KSC5338D/KSC5338DW NPN Triple Diffused Planar Silicon Transistor Features High Voltage Power Switch Switching Application Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices TO-220 or D2-PAK Equivalent Circuit D2-PAK C 1 B TO-220 E 1 1.Base 2.Coll

 ..2. Size:153K  samsung
 ksc5338d.pdf

KSC5338D NPN SILICON TRANSISTOR TO-220 HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION Wide S.O.A. Built-in Free-wheel Diode Suitable for ballast App;ication Low Variable Storage-time spread ABSOLUTE MIXIMUM RATING Characteristic Symbol Rating Unit 1.Base 2.Collector 3.Emitter Collector Base Voltage VCBO 1000 V Collector Emitter Voltage VCEO 450 V Internal schematic diagram

 ..3. Size:506K  onsemi
 ksc5338d ksc5338dw.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:257K  inchange semiconductor
 ksc5338d.pdf

isc Silicon NPN Power Transistor KSC5338D DESCRIPTION Collector Emitter Sustaining Voltage V 450V(Min) CEO Low Collector Saturation Voltage V = 0.5V(Max.)@ I = 0.8A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 7.1. Size:23K  samsung
 ksc5338f.pdf

KSC5338F NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO-220F High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A Collector Current (Pulse) IC 10 A Base Current (DC) IB 2 A 1

 7.2. Size:23K  samsung
 ksc5338.pdf

KSC5338 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH TO-220 SWITCHING APPLICATION High Speed Switching Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1000 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 9 V Collector Current (DC) IC 5 A 1.Base 2.Collector 3.Emitter Collector Current (Pulse) IC 10 A

 7.3. Size:146K  inchange semiconductor
 ksc5338.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5338 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR) CEO= 450V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec