KSC5502 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC5502
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 1200 V
Tensión colector-emisor (Vce): 600 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 2 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO220AB
- Selección de transistores por parámetros
KSC5502 Datasheet (PDF)
ksc5502.pdf

April 2008KSC5502NPN Planar Silicon TransistorHigh Voltage Power Switch Mode Application Small Variance in Storage TimeEquivalent Circuit Wide Safe Operating AreaC Suitable for Electronic Ballast Application B1 TO-220E1.Base 2.Collector 3.EmitterAbsolute Maximum Ratings * TC=25C unless otherwise notedSymbol Parameter Value UnitsBVCBO Collector-Base Vol
ksc5502.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksc5502d.pdf

KSC5502D/KSC5502DTD-PAKEquivalent CircuitHigh Voltage Power Switch Switching CApplication1 Wide Safe Operating Area TO-220 Built-in Free-Wheeling Diode B Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220E11.Base 2.Collector 3.EmitterNPN Triple Diffused Planar Silicon TransistorAbsol
ksc5502d ksc5502dt.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N3845A | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108 | KRC663U
History: 2N3845A | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108 | KRC663U



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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