15C01SS Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15C01SS
Código: YP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 330 MHz
Capacitancia de salida (Cc): 3.2 pF
Ganancia de corriente contínua (hFE): 300
Encapsulados: SSFP
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15C01SS datasheet
15c01ss.pdf
Ordering number ENN7508 15C01SS NPN Epitaxial Planar Silicon Transistor 15C01SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2159A [15C01SS] Features Top View Side View Large current capacitance. 1.4 Low collector-to-emitter saturation voltage (resistance). 0.1 0.25 RCE (s
15c01ss.pdf
Ordering number EN7508A 15C01SS Bipolar Transistor http //onsemi.com ( ) 15V, 0.6A, Low VCE sat NPN Single SSFP Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ=0.58 [IC=0.7A, IB=35mA] Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Small ON
15c01c.pdf
Ordering number ENN7504 15C01C NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2018B [15C01C] Features Large current capacitance. 0.4 0.16 3 Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.58 [IC=0.7A
Otros transistores... ZXTNS618MC , ZXTP05120HFF , ZXTPS717MC , ZXTPS718MC , ZXTPS720MC , 12A02CH , 12A02MH , 15C01M , 2SC2625 , 15C02CH , 15C02MH , 15GN01CA , 2SA1770 , 2SA1774 , 2SA1827 , 2SA2012 , 2SA2013 .
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