2SA2125 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number : ENN79882SA2125 / 2SC5964PNP / NPN Epitaxial Planar Silicon Transistors2SA2125 / 2SC5964DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.Specifications

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

Ordering number : EN7988B2SA2125/2SC5964Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplicaitons DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of MBIT process Large current capacity Low collector to emitter saturation voltage High-speed switching Halogen free

2SA2120 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2120 Power Amplifier Applications Unit: mm Complementary to 2SC5948 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitVCBOCollector-base voltage -200 V VCEOCollector-emitter voltage -200 V VEBOEmitter-base voltage -5 V

2SA2121 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2121 Power Amplifier Applications Unit: mm Complementary to 2SC5949 Recommended for audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -200 VEmitter-base voltage VEBO -5 VCollector

Ordering number : ENN80222SA2127PNP Epitaxial Planar Silicon Transistor2SA2127High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT process. Low saturation voltage. High current capacity and wide ASO.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Co

Ordering number : EN7920A 2SA2124SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon Transistor2SA2124High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of MBIT processes. Low collector-to-emitter saturation voltage. High current capacity. High-speed switching.Spe

Ordering number : ENN7990 2SA2126PNP Epitaxial Planar Silicon Transistor2SA2126DC / DC Converter ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25

2SA2126Ordering number : EN7990ASANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorDC / DC Converter Applications2SA2126Applications DC / DC converter, relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecifications

Ordering number : EN8022A2SA2127Bipolar Transistorhttp://onsemi.com-50V, -2A, Low VCE(sat), PNP Single MPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT process Low saturation voltage High current capacity and wide ASO SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions R

Ordering number : EN7920B2SA2124Bipolar Transistorhttp://onsemi.com-30V, -2A, Low VCE(sat), PNP Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of MBIT processes Low collector-to-emitter saturation voltage Large current capacity High-speed switchingSpecificationsAbsolute Maximum Ratings at T

Ordering number : EN7990A2SA2126Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta

Ordering number : EN7990A2SA2126Bipolar Transistorhttp://onsemi.com-50V, -3A, Low VCE(sat), PNP Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT processes High current capacitance Low collector-to-emitter saturation voltage High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta

This product complies with the RoHS Directive (EU 2002/95/EC).Transistors 2SA2122GSilicon PNP epitaxial planar typeFor general amplificationComplementary to 2SC5950G Package Features Code High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment andautomatic SMini3-F2 Marking symbol : 7Linsertion through the tape

SMD Type TransistorsPNP Transistors2SA2126TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=-3A Collector Emitter Voltage VCEO=-50V0.127 High current capacitance.+0.10.80-0.1max Low collector-to-emitter saturation voltage High-speed switching.+ 0.11 Base2.3 0.60-

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2120DESCRIPTIONRecommended for audio frequency amplifier output stageComplementary to 2SC5948100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA2126DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -50 VCB

isc Silicon PNP Power Transistor 2SA2121DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -200V(Min)(BR)CEOComplement to Type 2SC5949Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommended for audio frequency amplifier output sta