BC327-025 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC327-025
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 45 V
Corriente del colector DC máxima (Ic): 0.8 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260 MHz
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TO92
Búsqueda de reemplazo de BC327-025
BC327-025 datasheet
bc327-25 bc327-40.pdf
BC327-25 BC327-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC327-25 BC327-25 TO-92 / Bulk BC327-25-AP BC327-25 TO-92 / Ammopack BC327-40 BC327-40 TO-92 / Bulk BC327-40-AP BC327-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE NPN COMPLEMENTARY TYPES
bc807 bc807-16 bc807-25 bc807-40 bc807w bc807-16w bc807-25w bc807-40w bc327 bc327-16 bc327-25 bc327-40.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc327-16bk-25bk-40bk bc328-16bk-25bk-40bk.pdf
BC327-xBK / BC328-xBK BC327-xBK / BC328-xBK General Purpose Si-Epitaxial Planar Transistors PNP PNP Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2010-06-23 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Geh usematerial UL9
Otros transistores... 30A02CH , 30A02MH , 30C02CH , 50A02CH , 50A02MH , 50C02CH , 50C02MH , 55GN01CA , C5198 , BC337-025 , BC337-040 , BC807-16L , BC807-25L , BC807-40L , BC817-16L , BC817-25L , BC817-40L .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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