BC856SERIES . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC856SERIES
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.265 W
Tensión colector-emisor (Vce): 65 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 220
Paquete / Cubierta: SOT723
Búsqueda de reemplazo de transistor bipolar BC856SERIES
BC856SERIES Datasheet (PDF)
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BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20
bc856s 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETandbook, halfpageMBD128BC856SPNP general purpose doubletransistorProduct specification 1999 Aug 24Philips Semiconductors Product specificationPNP general purpose double transistor BC856SFEATURES Two transistors in one package Reduces number of components and board space6 5 4handbook, halfpage No mutual interference between
bc856s.pdf
BC856S65 V, 100 mA PNP/PNP general-purpose transistorRev. 02 19 February 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)Surface-Mounted Device (SMD) plastic package.1.2 Features Low collector capacitance Low collector-emitter saturation voltage Closely matched current gain Reduces nu
bc856s.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bc856s.pdf
BC 856SPNP Silicon AF Transistor Array4 For AF input stages and driver applications5 High current gain6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with high matching in one package32VPS056041Type Marking Ordering Code Pin Configuration PackageBC 856S 3Ds Q62702-C2532 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363Maxi
bc856s bc856u bc857s.pdf
BC856S/U_BC857SPNP Silicon AF Transistor Arrays For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated transistor with good matching in one package BC856S / U, BC857S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according
bc856s.pdf
BC856SFeatures Muti-Chip Transistor Halogen Free. Green Device (Note 1)PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise SpecifiedSOT-363 Operating Junct
bc856s.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP) 654 Two transistors in one package 12 3 Reduces number of components and board space No mutual interference between the transistors
bc856s.pdf
SMD Type TransistorsPNP TransistorsBC856S (KC856S) Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V PNP General Purpose Double Transistor6 5 4TR2TR11 2 3 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -65 V Emitter - Base Voltage V
bc856s.pdf
RoHS COMPLIANT BC856S Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 5Ft Equivalent circuit 1 / 5 S-S3176 Yangzhou Y
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050