BCW30L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BCW30L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-emisor (Vce): 32 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 215
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BCW30L
BCW30L datasheet
bcw29lt1 bcw30lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BCW29LT1/D General Purpose Transistors BCW29LT1 PNP Silicon COLLECTOR BCW30LT1 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 32 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 32 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO 5.0 Vdc
bcw30lt1-d.pdf
BCW30LT1G General Purpose Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector - Emitter Voltage VCEO -32 Vdc Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc 3 Collector Current - Continuous IC -100
bcw30lt1g.pdf
BCW30LT1 General Purpose Transistors PNP Silicon http //onsemi.com Features Pb-Free Packages are Available COLLECTOR 3 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO -32 Vdc 2 EMITTER Collector - Base Voltage VCBO -32 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -100 mAdc 3 THERMAL CHARACTERISTICS Characteris
bcw30lt1g sbcw30lt1g.pdf
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Otros transistores... BC857BDW1 , BC857BL , BC857CDW1 , BC857CL , BC858AL , BC858BL , BC858CDXV6 , BC858CL , SS8050 , BCW32L , BCW33L , BCW65AL , BCW68GL , BCW70L , BCW72L , BCX17L , BCX19L .
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