BUL45D2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL45D2
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 75 W
Tensión colector-emisor (Vce): 400 V
Corriente del colector DC máxima (Ic): 5 A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 22
Paquete / Cubierta: TO220
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BUL45D2 Datasheet (PDF)
bul45d2r.pdf
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Order this documentMOTOROLAby BUL45D2/DSEMICONDUCTOR TECHNICAL DATABUL45D2Designer's Data SheetPOWER TRANSISTORS5 AMPERESHigh Speed, High Gain Bipolar700 VOLTSNPN Power Transistor with75 WATTSIntegrated Collector-EmitterDiode and Built-in EfficientAntisaturation NetworkThe BUL45D2 is stateofart High Speed High gain BIPolar transistor (H2BIP).High dynamic
bul45d2g.pdf
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BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodewww.onsemi.comand Built-in Efficient AntisaturationNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lot700 VOLTS, 75 WATTSminimum spread (150 ns on storage time) make it i
bul45d2-d.pdf
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BUL45D2GHigh Speed, High GainBipolar NPN PowerTransistorwith Integrated Collector-Emitter Diodeand Built-in Efficient Antisaturationhttp://onsemi.comNetworkPOWER TRANSISTORThe BUL45D2G is state-of-art High Speed High gain BiPolar5.0 AMPERES,transistor (H2BIP). High dynamic characteristics and lot-to-lotminimum spread (150 ns on storage time) make it ideally suitable fo
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