CPH6003A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number : ENA1078 CPH6003ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-frequency Medium-power AmplifierCPH6003AApplicationsFeatures High gain (fT=7GHz typ). High Current : (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Sym

Ordering number:ENN6132ANPN Epitaxial Planar Silicon TransistorCPH6001High-Frequency Low-NoiseAmplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =11dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2146A Small and slim 6-pin package.[CPH6001] Large allowable collector dissipation (800mW max).0.152.96 5 40.051 2

Ordering number : ENA1079 CPH6001ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-NoiseCPH6001AAmplifier ApplicationsFeatures High gain : S21e2=11dB typ (f=1GHz). High cutoff frequency : fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max).SpecificationsAbsolute Maximum

CPH6020Ordering number : ENA1548SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorCPH6020High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain | |2 : S21e =13.5dB typ (f=1GHz).Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditi

CPH6021Ordering number : ENA1910SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorCPH6021High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =14dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings