CPH6003A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH6003A
Código: GC
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000 MHz
Capacitancia de salida (Cc): 1.3 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: CPH6
Búsqueda de reemplazo de transistor bipolar CPH6003A
CPH6003A Datasheet (PDF)
cph6003a.pdf
Ordering number : ENA1078 CPH6003ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-frequency Medium-power AmplifierCPH6003AApplicationsFeatures High gain (fT=7GHz typ). High Current : (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Sym
cph6001.pdf
Ordering number:ENN6132ANPN Epitaxial Planar Silicon TransistorCPH6001High-Frequency Low-NoiseAmplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =11dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2146A Small and slim 6-pin package.[CPH6001] Large allowable collector dissipation (800mW max).0.152.96 5 40.051 2
cph6001a.pdf
Ordering number : ENA1079 CPH6001ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-NoiseCPH6001AAmplifier ApplicationsFeatures High gain : S21e2=11dB typ (f=1GHz). High cutoff frequency : fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max).SpecificationsAbsolute Maximum
cph6020.pdf
CPH6020Ordering number : ENA1548SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorCPH6020High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain | |2 : S21e =13.5dB typ (f=1GHz).Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditi
cph6021.pdf
CPH6021Ordering number : ENA1910SANYO SemiconductorsDATA SHEETPNP Epitaxial Planar Silicon TransistorCPH6021High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =14dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050