CPH6003A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH6003A
Código: GC
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000 MHz
Capacitancia de salida (Cc): 1.3 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: CPH6
Búsqueda de reemplazo de CPH6003A
CPH6003A datasheet
cph6003a.pdf
Ordering number ENA1078 CPH6003A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-frequency Medium-power Amplifier CPH6003A Applications Features High gain (fT=7GHz typ). High Current (IC=150mA). Ultraminiature and thin 6pin package. Large Collector Disspation (800mW). Specifications Absolute Maximum Ratings at Ta=25 C Parameter Sym... See More ⇒
cph6001.pdf
Ordering number ENN6132A NPN Epitaxial Planar Silicon Transistor CPH6001 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =11dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2146A Small and slim 6-pin package. [CPH6001] Large allowable collector dissipation (800mW max). 0.15 2.9 6 5 4 0.05 1 2 ... See More ⇒
cph6001a.pdf
Ordering number ENA1079 CPH6001A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise CPH6001A Amplifier Applications Features High gain S21e 2=11dB typ (f=1GHz). High cutoff frequency fT=6.7GHz typ. Small and slim 6-pin package. Large allowable collector dissipation (800mW max). Specifications Absolute Maximum ... See More ⇒
cph6020.pdf
CPH6020 Ordering number ENA1548 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor CPH6020 High-Frequency Low-Noise Amplifier Features Low-noise use NF=1.2dB typ (f=1GHz). High cut-off frequency fT=16GHz typ (VCE=5V). High gain 2 S21e =13.5dB typ (f=1GHz). Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditi... See More ⇒
Otros transistores... CPH3223 , CPH3240 , CPH3245 , CPH5504 , CPH5506 , CPH5517 , CPH5524 , CPH6001A , B647 , CPH6020 , CPH6021 , CPH6121 , CPH6122 , CPH6123 , CPH6153 , CPH6223 , CPH6501 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
k117 transistor | 2sc2291 | bc139 | 2sc1398 | 2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent






