DTA114EE Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA114EE
Código: 14_6A
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 35
Encapsulados: SC75
SOT416
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DTA114EE datasheet
..1. Size:152K rohm
dta114ee.pdf 
100mA / 50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to
..2. Size:342K htsemi
dta114eca dta114ee dta114esa dta114eua.pdf
DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage of almost co
..3. Size:800K wietron
dta114ee.pdf
DTA114EE Series Bias Resistor Transistor PNP Silicon 3 3 P b Lead(Pb)-Free COLLECTOR 1 2 3 R1 1 R2 BASE SC-89 (SOT-523F) 2 EMITTER Maximum Ratings (TA=25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage 50 V VCEO VCBO V Collector-Base Voltage 50 mA IC 100 Collector Current-Continuous Thermal Characteristics Characteristics Symbol Max Unit
..4. Size:437K willas
dta114ee.pdf
FM120-M WILLAS THRU DTA114EE PNP Digital Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize board spac
..5. Size:1275K kexin
dta114ee.pdf
SMD Type Transistors Digital Transistors DTA114EE (KDTA114EE ) SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features Built-in bias resistors enable the configuration of an inverter circuit 2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolatio
0.1. Size:54K motorola
pdta114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1
0.2. Size:57K motorola
pdta114ee 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit
0.3. Size:54K philips
pdta114eef 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1
0.4. Size:57K philips
pdta114ee 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA114EE PNP resistor-equipped transistor Preliminary specification 1998 Jul 23 Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EE FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification of circuit
0.5. Size:859K nxp
pdta114ee pdta114em pdta114et pdta114eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.6. Size:152K rohm
dta114eeb.pdf
100mA / 50V Digital transistors (with built-in resistors) DTA114EEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F 1.6 0.7 0.26 Features (3) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)
0.7. Size:3896K rohm
dta114eefra dta114ekafra dta114emfha dta114euafra.pdf
DTA114E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC -50V IC(MAX.) -100mA R1 10k DTA114EM DTA114EEB R2 (SC-105AA) (SC-89) 10k EMT3 UMT3F lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration
0.8. Size:227K diodes
ddta114ee.pdf
DDTA (R1 = R2 SERIES) E DDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
0.9. Size:156K onsemi
nsvdta114eet1g.pdf
MUN2111, MMUN2111L, MUN5111, DTA114EE, DTA114EM3, NSBA114EF3 Digital Transistors (BRT) R1 = 10 kW, R2 = 10 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (
0.10. Size:108K onsemi
dta114eet1.pdf
DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two r
0.11. Size:135K onsemi
dta114eet 6a-m sot416.pdf
DTA114EET1 SERIES Preferred Devices Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor http //onsemi.com Transistor) contains a single transistor with a monolithic bias network consisting of two res
0.12. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL
0.13. Size:770K lrc
ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons
0.15. Size:97K chenmko
chdta114eegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA114EEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
Otros transistores... CPH6123, CPH6153, CPH6223, CPH6501, CPH6531, CPH6532, D44VH, D45VH, C945, DTA114TE, DTA114YE, DTA115EE, DTA143EE, DTA143ZE, DTA144EE, DTC114EE, DTC114TE
