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EMD4DXV6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMD4DXV6
   Código: U7
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN*PNP
   Resistencia de Entrada Base R1 = 10 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: SOT563

 Búsqueda de reemplazo de transistor bipolar EMD4DXV6

 

EMD4DXV6 Datasheet (PDF)

 ..1. Size:184K  onsemi
emd4dxv6.pdf

EMD4DXV6
EMD4DXV6

DATA SHEETwww.onsemi.comDual Bias Resistor (3) (2) (1)Transistors R1 R2Q1NPN and PNP Silicon Surface MountQ2Transistors with Monolithic BiasR2 R1Resistor Network(4) (5) (6)EMD4DXV6The BRT (Bias Resistor Transistor) contains a single transistor with6a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digita

 0.1. Size:72K  onsemi
nsvemd4dxv6t5g.pdf

EMD4DXV6
EMD4DXV6

EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace

 0.2. Size:65K  onsemi
emd4dxv6t1g emd4dxv6t5g.pdf

EMD4DXV6
EMD4DXV6

EMD4DXV6Dual Bias ResistorTransistorsNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor Networkhttp://onsemi.comThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseresistor and a base-emitter resistor. These digital transistors areR1 R2designed to replace

 0.3. Size:65K  onsemi
emd4dxv6-d.pdf

EMD4DXV6
EMD4DXV6

EMD4DXV6T1,EMD4DXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN and PNP Silicon Surface Mounthttp://onsemi.comTransistors with Monolithic BiasResistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor withR1 R2a monolithic bias network consisting of two resistors; a series baseQ1resistor and a base-emitter resistor. These digita

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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