EMZ1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMZ1
Código: Z1
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.357 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT563
Búsqueda de reemplazo de transistor bipolar EMZ1
EMZ1 Datasheet (PDF)
emz1 umz1n imz1a.pdf
EMZ1 / UMZ1N / IMZ1ADatasheetGeneral purpose transistor (dual transistors)lOutlinelParameter Value SOT-563 SOT-363VCEO50VIC150mA EMZ1 UMZ1N(EMT6) (UMT6) Parameter Value SOT-457 VCEO-50VIC-150mA IMZ1A(SMT6) lF
emz1 umz1n imz1a umz1n.pdf
EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features External dimensions (Unit : mm) 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMZ1EMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 or UMT3 or SMT3 (5) (2)(6) (1)1.2automatic mounting machines. 1.63) Transistor elements are independent,
pemz1.pdf
DISCRETE SEMICONDUCTORS DATA SHEETM3D744PEMZ1NPN/PNP general purpose transistorsProduct data sheet 2001 Nov 07Supersedes data of 2001 Sep 25NXP Semiconductors Product data sheetNPN/PNP general purpose transistors PEMZ1FEATURES PINNING 300 mW total power dissipationPIN DESCRIPTION Very small 1.6 1.2 mm ultra thin package1, 4 emitter TR1; TR2 Self align
pemz1.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
emz1fha umz1nfha imz1afra.pdf
EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRATransistors AEC-Q101 QualifiedGeneral purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRA Features External dimensions (Unit : mm)1) Both a 2SA1037AK chip and 2SC2412K chip in a 2SA1037AKFRA 2SC2412KFRAEMZ1EMZ1FHAEMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 o
emz1fha.pdf
EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRATransistors AEC-Q101 QualifiedGeneral purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A EMZ1FHA / UMZ1NFHA / IMZ1AFRA Features External dimensions (Unit : mm)1) Both a 2SA1037AK chip and 2SC2412K chip in a 2SA1037AKFRA 2SC2412KFRAEMZ1EMZ1FHAEMT or UMT or SMT package. (4) (3)2) Mounting possible with EMT3 o
emz1dxv6-d.pdf
EMZ1DXV6T1,EMZ1DXV6T5Dual General PurposeTransistorsNPN/PNP Dual (Complementary)http://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 Lead-Free Solder Plating Low VCE(SAT), t0.5 V(4) (5) (6) These are Pb-Free Devi
chemz1gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMZ1GPSURFACE MOUNTDual Silicon TransistorVOLTAGE 50 Volts CURRENT 150 mAmpereAPPLICATION* Small Signal Amplifier .FEATURE* Small surface mounting type. (SOT-563)SOT-563* Low saturation voltage VCE(sat)=0.5V(max.)(IC=50mA) * Low cob. Cob=4.0pF(Typ.)* PC= 150mW (Total),120mW per element must not be exceeded.* High saturation current capabilit
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
