MBT35200 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBT35200
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 35 V
Corriente del colector DC máxima (Ic): 2 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: TSOP-6
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MBT35200 datasheet
mbt35200mt1 smbt35200mt1g.pdf
MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM
mbt35200mt1-d.pdf
MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 35 VOLTS 2.0 AMPS MAXIMUM RATINGS (TA = 25 C) PNP TRANSISTOR Rating Symbol Max Unit Collector-Emitter Voltage VCEO -35 Vdc COLLECTOR Collector-Base Voltage VCBO -55 Vdc 1, 2, 5, 6 Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuou
mbt35200mt1.pdf
MBT35200MT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http //onsemi.com Features 35 VOLTS AEC-Q101 Qualified and PPAP Capable 2.0 AMPS S Prefix for Automotive and Other Applications Requiring Unique PNP TRANSISTOR Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and a
mbt35200mt1g.pdf
MBT35200MT1, SMBT35200MT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management http //onsemi.com in Portable Applications 35 VOLTS Features 2.0 AMPS AEC-Q101 Qualified and PPAP Capable PNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb-Free Packages are Available* MAXIM
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