MBT35200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MBT35200
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-emisor (Vce): 35 V
   Corriente del colector DC máxima (Ic): 2 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TSOP-6

Búsqueda de reemplazo de transistor bipolar MBT35200

MBT35200 Datasheet (PDF)

0.1. Size:152K onsemi
mbt35200mt1 smbt35200mt1g.pdf

MBT35200MT1,SMBT35200MT1GHigh Current Surface Mount PNP SiliconSwitching Transistor for Load Management http://onsemi.comin Portable Applications35 VOLTSFeatures2.0 AMPS AEC-Q101 Qualified and PPAP CapablePNP TRANSISTOR S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements Pb-Free Packages are Available*MAXIM

0.2. Size:64K onsemi
mbt35200mt1-d.pdf

MBT35200MT1High Current SurfaceMount PNP SiliconSwitching Transistor forLoad Management inhttp://onsemi.comPortable Applications35 VOLTS2.0 AMPSMAXIMUM RATINGS (TA = 25C)PNP TRANSISTORRating Symbol Max UnitCollector-Emitter Voltage VCEO -35 VdcCOLLECTORCollector-Base Voltage VCBO -55 Vdc1, 2, 5, 6Emitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuou

0.3. Size:178K onsemi
mbt35200mt1.pdf

MBT35200MT1High Current Surface Mount PNP SiliconSwitching Transistor for Load Management in Portable Applicationshttp://onsemi.comFeatures35 VOLTS AEC-Q101 Qualified and PPAP Capable2.0 AMPS S Prefix for Automotive and Other Applications Requiring UniquePNP TRANSISTORSite and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and a

0.4. Size:152K onsemi
mbt35200mt1g.pdf