MCH4009 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MCH4009
Código: GG
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.12 W
Tensión colector-base (Vcb): 10 V
Tensión colector-emisor (Vce): 3.5 V
Tensión emisor-base (Veb): 2.5 V
Corriente del colector DC máxima (Ic): 0.04 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20000 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: MCPH4
Búsqueda de reemplazo de transistor bipolar MCH4009
MCH4009 Datasheet (PDF)
mch4009.pdf
Ordering number : ENA0389 MCH4009SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4009and OSC ApplicationsFeatures Low-noise use : NF=1.1dB typ (f=2GHz). High cut-off frequency : fT=25GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=17dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratin
mch4013.pdf
Ordering number : ENA1268 MCH4013SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to X Band Low-Noise AmplifierMCH4013and OSC ApplicationsFeatures High cut-off frequency : fT=22.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=16dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition
mch4016.pdf
MCH4016Ordering number : ENA1922SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4016High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
mch4017.pdf
MCH4017Ordering number : ENA1912SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4017High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
mch4021.pdf
MCH4021Ordering number : ENA1281SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4021High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions
mch4015.pdf
MCH4015Ordering number : ENA1911SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4015High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
mch4020.pdf
MCH4020Ordering number : ENA1280SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4020High Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz). High cut-off frequency : fT=16GHz typ (VCE=5V). High gain : S21e =17.5dB typ (f=1GHz). | |2Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions
mch4014.pdf
MCH4014Ordering number : ENA1921SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorMCH4014High-Frequency Low-Noise AmplifierFeatures Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecifications at Ta=25CAbsolute Maximum Ratings
mch4016.pdf
Ordering number : ENA1922MCH4016RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
mch4017.pdf
Ordering number : ENA1912MCH4017RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
mch4015.pdf
Ordering number : ENA1911MCH4015RF Transistorhttp://onsemi.com12V, 100mA, fT=10GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =17dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollec
mch4020.pdf
Ordering number : ENA1280AMCH4020RF Transistorhttp://onsemi.com8V, 150mA, fT=16GHz, NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : S21e =17.5dB typ (f=1GHz) | |2 Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
mch4014.pdf
Ordering number : ENA1921AMCH4014RF Transistorhttp://onsemi.com12V, 30mA, fT=10GHz NPN Single MCPH4Features Low-noise use : NF=1.2dB typ (f=1GHz) High cut-off frequency : fT=10GHz typ (VCE=5V) High gain | |2 : S21e =18dB typ (f=1GHz) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollect
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BDY83C
History: BDY83C
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D