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MMBT2131 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT2131
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.342 W
   Tensión colector-emisor (Vce): 30 V
   Corriente del colector DC máxima (Ic): 0.7 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: SC-74 SC59-ML

 Búsqueda de reemplazo de transistor bipolar MMBT2131

 

MMBT2131 Datasheet (PDF)

 0.1. Size:60K  onsemi
mmbt2131t1-d.pdf

MMBT2131
MMBT2131

MMBT2131T1General PurposeTransistorsPNP Bipolar Junction Transistor(Complementary NPN Device: MMBT2132T1/T3)http://onsemi.comNOTE: Voltage and Current are negative for the PNP Transistor.0.7 AMPERESFeatures30 VOLTS - V(BR)CEO Pb-Free Package is Available342 mWMAXIMUM RATINGS (TC = 25C unless otherwise noted)COLLECTORRating Symbol Value UnitPINS 2, 5Collector

 0.2. Size:159K  onsemi
mmbt2131t1g.pdf

MMBT2131
MMBT2131

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.1. Size:59K  onsemi
mmbt2132t3-d.pdf

MMBT2131
MMBT2131

MMBT2132T3General PurposeTransistorsNPN Bipolar Junction Transistorhttp://onsemi.comFeatures Pb-Free Package is Available0.7 AMPSMAXIMUM RATINGS (TC = 25C unless otherwise noted)30 VOLTS - V(BR)CEORating Symbol Value Unit342 mWCollector-Emitter Voltage VCEO 30 VCollector-Base Voltage VCBO 40 VCOLLECTORPINS 2, 5Emitter-Base Voltage VEBO 5.0 VBASECollector

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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