MMBT2222L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT2222L
Código: M1B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-emisor (Vce): 30 V
Corriente del colector DC máxima (Ic): 0.6 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT2222L
MMBT2222L Datasheet (PDF)
mmbt2222l mmbt2222al smmbt2222al.pdf
MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconwww.onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and1PPAP CapableBASE2MAXIMUM RATINGSEMITTERRating Symbol Valu
mmbt2222lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 2222 2222A Unit2CollectorEmitter Voltage VCEO 30 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 75 VdcSOT23 (TO23
mmbt2222lt1-alt1.pdf
MMBT2222LT1G,MMBT2222ALT1GGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2MMBT2222LT1G 30MMBT2222ALT1G 40 EMITTERCollector-Base Voltage VCBO VdcMMBT2222LT1G 603MMBT2222ALT1G 75
mmbt2222lt1g.pdf
MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo
mmbt2222lt1.pdf
RoHS MMBT2222LT1SOT-23 TRANSISTORDescription SOT-23Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor.2.30.21.30.20.5Ref. hFE RANK0.5Ref.Features Large collector current:ICmax=600mA23 Low collector saturation voltage 1P enabling low voltage operation1 Complementary pair with . Type Name0.38Ref.MINO.1 0.01-0.101.EMITTER2.BASE
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050