MMBT2369AL . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT2369AL
Código: 1JA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 4.5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar MMBT2369AL
MMBT2369AL Datasheet (PDF)
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mmbt2369alt1g.pdf
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PN2369A MMBT2369ACEC TO-92BSOT-23BEMark: 1SNPN Switching TransistorThis device is designed for high speed saturated switching at collectorcurrents of 10 mA to 100 mA. Sourced from Process 21.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Vo
mmbt2369.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2369LT1/DMMBT2369LT1Switching Transistors COLLECTOR*MMBT2369ALT13NPN Silicon*Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol Value Unit1CollectorEmitter Voltage VCEO 15 Vdc2CollectorEmitter Voltage VCES 40 VdcCollectorBase Voltage VCBO 40 Vdc CASE 31808, STYL
mmbt2369.pdf
MMBT2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.CESOT-23BMark: 1JAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 15 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4.5 V
mmbt2369 pn2369.pdf
February 2008MMBT2369 / PN2369NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10mA to 100mA. Sourced from process 21.MMBT2369 PN2369CESOT-23BTO-921Mark: 1J1. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emit
mmbt2369lt1.pdf
MMBT2369LT1G,MMBT2369ALT1GSwitching TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO 15 Vdc2EMITTERCollector-Emitter Voltage VCES 40 VdcCollector-Base Voltage VCBO 40 VdcEmitter-Base Voltage VEBO 4.5 Vd
mmbt2369lt1g.pdf
MMBT2369LT1G,SMMBT2369LT1G,MMBT2369ALT1G,SMMBT2369ALT1GSwitching Transistorshttp://onsemi.comNPN SiliconFeatures AEC-Q101 Qualified and PPAP CapableSOT-23 S Prefix for Automotive and Other Applications Requiring UniqueCASE 318Site and Control Change RequirementsSTYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant*COLLECTOR3M
mmbt2369-a-lt1.pdf
FM120-M WILLASTHRUMMBT2369(A)LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSwitching TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures We declare that the material of product compliance with RoHS requirements. Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD
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