MMBT3416L . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3416LT3/DGeneral Purpose AmplifierMMBT3416LT3NPN SiliconCOLLECTOR313BASE122EMITTERCASE 31808, STYLE 6SOT23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTHERMAL

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3640LT1/DSwitching TransistorMMBT3640LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 12 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 12 VdcSOT23 (TO236AB)EmitterBase Voltage V

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3906LT1/DGeneral Purpose TransistorMMBT3906LT1COLLECTORPNP Silicon3Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 40 VdcSOT23 (TO236AB)EmitterBase Vol

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 6CollectorEmitter Voltage VCEO 40 VdcSOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VE

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 6CollectorEmitter Voltage VCEO 40 VdcSOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VE

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT3906PNP switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationPNP switching transistor MMBT3906FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Telephony and professional communication

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT3904NPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT3904FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Telephony and professional communication

MMBT3904SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT3904 34 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT3906APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

MMBT3906SMALL SIGNAL PNP TRANSISTORPRELIMINARY DATAType MarkingMMBT3906 36 SILICON EPITAXIAL PLANAR PNPTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE ISMMBT3904APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOLTA

February 2008MMBT3906TPNP Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B Suitable for general switching & amplificationMarking : A06 Well suited for portable application SOT-523F As complementary type, NPN MMBT3904T is recommended Absolute Maximum Ratings Ta = 25C unless o

Discrete POWER & SignalTechnologiesMPS3702 MMBT3702CEC TO-92BBE SOT-23Mark: 137PNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500mA. Sourced fromProcess 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV

MMBT3646Switching Transistor32SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 15 VVCES Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5IC Collector Current (DC) - Continuous 300 mAPD Total Device Dissipation @ TA=25C 625

February 2008MMBT3904TNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B Suitable for general switching & amplificationMarking : A04 Well suited for portable application SOT-523F As complementary type, PNP MMBT3906T is recommended Absolute Maximum Ratings Ta = 25C unless o

MMBT3906KPNP Epitaxial Silicon TransistorGeneral Purpose TransistorMarking32AK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current -200 mAPC Collector Power Dissipation 350

2N3904 MMBT3904 PZT3904CCEECC TO-92BBSOT-23 BESOT-223Mark: 1ANPN General Purpose AmplifierThis device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage

2N3906 MMBT3906 PZT3906CCEECC TO-92BBBESOT-223SOT-23Mark: 2APNP General Purpose AmplifierThis device is designed for general purpose amplifier and switchingapplications at collector currents of 10 A to 100 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage -40 VVCBO Collector-Base Vol

February 2008MMBT3904SLCNPN Epitaxial Silicon TransistorFeatures General purpose amplifier transistor.E Ultra small surface mount package for all types(max 0.43mm tall)B Suitable for general switching & amplification Well suited for portable applicationMarking : AA SOT-923F As complementary type, PNP MMBT3906SL is recommended Pb freeAbsolute Maxim

MMBT3904KNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31AK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 200 mAPC Collector Power Dissipation 350 mW

August 2012MMBT3906SLPNP Epitaxial Silicon TransistorFeatures General purpose amplifier transistor Ultra small surface mount package for all types (max 0.43mm tall) Suitable for general switching & amplification Well suited for portable application As complementary type, NPN MMBT3904SL is recommended. Pb freeCOLLECTOR3C1BASEEB2Marking : AB

PN3640 MMBT3640CETO-92CB BSOT-23EMark: 2JPNP Switching TransistorThis device is designed for very high speed saturated switchingat collector currents to 100 mA. Sourced from Process 65. SeePN4258 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 12 VVCBO Collector-Base Voltage

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBT3906T 40V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > -40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = -200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Termin

MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary PNP Type Available (MMBT3906) Case Material: Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant

MMBT3904FA40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > 40V Case: X2-DFN0806-3 IC = 200mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Le

MMBT3906FZ 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > -40V Case: X2-DFN0606-3 IC = -200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Lev

MMBT3904LP 40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X1-DFN1006-3 BVCEO > 40V Case Material: Molded Plastic, Green Molding Compound. IC = 200mA High Collector Current UL Flammability Classification Rating 94V-0 PD = 1000mW Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 0.60mm2 Package Footprint,

MMBT3904FZ 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BVCEO > 40V Case: X2-DFN0606-3 IC = 200mA High Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 0.36mm2 Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level

MMBT3904T 60V NPN SMALL SIGNAL TRANSISTOR IN SOT523 Features Mechanical Data BVCEO > 40V Case: SOT523 Case Material: Molded Plastic. Green Molding Compound. IC = 200mA Collector Current UL Flammability Rating 94V-0 Epitaxial Planar Die Construction Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Type Available (MMBT3904T) CDim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22B CTOP VIEWB 0.75 0.85 0.80Mechanical Data B EC 1.45 1.75 1.60G Case: SOT-523 D 0.50

MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound Complementary NPN Type: MMBT3904 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > -40V Case: X1-DFN1006-3 IC = -200mA High Collector Current Case Material: Molded Plastic, "Green" Molding Compound. PD = 1000mW Power Dissipation UL Flammability Classification Rating 94V-0 0.60mm2 Package Footprint, 13 times Smaller than SOT23 Moisture Sensitivity: Lev

MMBT3904T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT3906T) CDim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80B EC 1.45 1.75 1.60Mechanical Data

MMBT3906FA40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BVCEO > -40V Case: X2-DFN0806-3 IC = -200mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. PD = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 0.48mm2 package footprint, 16 times smaller than SOT23 Moisture Sensitivity:

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S: For orientation in reel see package information below Pb-free (RoHS compliant)

SMBT3906...MMBT3906PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below P

SMBT3906/ MMBT3906PNP Silicon Switching Transistor3 High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Complementary type: 2 SMBT3904/ MMBT3904 (NPN)1VPS05161Type Marking Pin Configuration PackageSMBT3906/ MMBT3906 s2A SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCEO40Coll

SMBT3904...MMBT3904NPN Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For orientation in reel see package information below Pb-free

SMBT3906...MMBT3906PNP Silicon Switching Transistors High DC current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage For SMBT3906S and SMBT3906U: Two (galvanic) internal isolated transistor with good matching in one package Complementary types: SMBT3904...MMBT3904 (NPN) SMBT3906S/ U: for orientation in reel see package information below P

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMBT3906TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Surface Mount SOT-523 Package Epitaxial Planar Die ConstructionPurpose Transistor Epoxy

MMBT3904Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -5

MMBT3904HE3Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1 NPN Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS AmplifierCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature R

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMBT3906TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General Surface Mount SOT-523 Package Epitaxial Planar Die ConstructionPurpose Transistor Epoxy

MMBT3906HE3Features Halogen Free. "Green" Device (Note 1) AEC-Q101 Qualified Moisture Sensitivity Level 1PNP Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) AmplifierMaximum RatingsSOT-23 Operating Junction Temperature Range: -55 to +150

MMBT3904TFeatures Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMBT3906CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPNP General Moisure Sensitivity Level 1 Capable of 300mWatts

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT3904Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 350mWatts of Power Dissipation and 200mA Ic.NPN General Operating and Storage Junction Temperatures: -55 to 150 Surface Mount SOT-23 Package Purpose Amplifier Lead Free Finish/RoHS Compl

MMBT3904L3Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range:

M C CTMonentsMicro Commercial Components 20736Marilla Street ChatsworthMMBT3906 Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designatesRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPNP GeneraI Moisure Sensitivity Level 1Purpse AmpIifier Marking:2AMaximum Ra

MMBT3906L3Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF"PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingGeneral Purpose Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSAmplifierCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise Specified

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMBT3904TCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features150mW Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Operatingand Storage Junction Temperatures: -55 to 150 Purpose Amplifier Epoxy meets

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT3906TT1General PurposeTransistorsPNP SiliconThis transistor is designed for general purpose amplifierwww.onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEAMPLIFIER TRANSISTORSFeatures NSVM Prefix for Automotive and Other Applications RequiringSURFACE MOUNTUnique Site and Co

MMBT3904TT1G,SMMBT3904TT1GGeneral Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierwww.onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS S Prefix for Automotive and Other Applications Requiring UniqueSURFACE MOUNT

MMBT3906LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -40 Vdc2Collector-Base Voltage VCBO -40 VdcEMITTEREmitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC -200 mAdc

MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSwww.onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emitte

MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian

MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi

MMBT3904TT1G,SMMBT3904TT1GGeneral Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEFeaturesAMPLIFIER TRANSISTORS AEC-Q101 Qualified and PPAP CapableSURFACE MOUNT S Prefix for Automo

MMBT3904LT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO 40 VdcBASECollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 Vdc 2EMITTERCollector Current - Continuous IC 200 mAdcColl

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N3906 / MMBT3906 / PZT3906PNP General-Purpose AmplifierDescriptionThis device is designed for general-purpose amplifierand switching applications at collector currents of 10 mAto 100 mA.2N3906 PZT3906MMBT3906CCEECBTO-92 SOT-23 SOT-223BMark:2AEBCOrdering InformationPart Number Marking Package Packing Method Pack Quantity2N3906BU 2N3906 TO-92 3L Bulk 10000

MMBT3906TT1General PurposeTransistorsPNP SiliconThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Pb-Free Package is AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Ra

MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquehttp://onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3Compliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERColl

MMBT3906L, SMMBT3906LGeneral Purpose TransistorPNP SiliconFeatures AEC-Q101 Qualified and PPAP Capablehttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTER

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBT3904TT1General Purpose TransistorsNPN SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-416/SC-75 package which isdesigned for low power surface mount applications.http://onsemi.comFeaturesGENERAL PURPOSE Pb-Free Package is AvailableAMPLIFIER TRANSISTORSSURFACE MOUNTMAXIMUM RATINGS (TA = 25C)COLLECTORRating

UNISONIC TECHNOLOGIES CO., LTD MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT3904G-AE3-R SOT-23 E B C Tape ReelMMBT3904G-AL3-R SOT-323 E B C Tape

UNISONIC TECHNOLOGIES CO., LTD MMBT3906 PNP SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3904 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT3906G-AE3-R SOT-23 E B C Tape ReelMMBT3906G-AL3-R SOT-323 E B C Tape ReelMMB

MMBT3906EFPNP Silicon TransistorDescriptions PIN Connection Small signal application Switching application 3 Features 1 Low collector saturation voltage Low collector output capacitance 2 Complementary pair with MMBT3904EF SOT-523F Ordering Information Type NO. Marking Package Code Y MMBT3906EF SOT-523F Device Code

MMBT3904EFNPN Silicon TransistorDescriptions PIN Connection Small signal application Switching application 3 Features Low collector saturation voltage 1 Low collector output capacitance 2 Complementary pair with MMBT3906EF SOT-523F Ordering Information Type NO. Marking Package Code Z MMBT3904EF SOT-523F Device Code

MMBT3906T PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking ShippingMMBT3906T 2A 3000/Tape&ReelMillimeter Millimete

MMBT3904 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION AL General switching and amplification. 33Top View C B 11 22K EPACKAGING DIMENSION

MMBT3904FWNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESSOT-523A Epitaxial Planar Die ConstructionDim Min MaxL Complementary PNP Type AvailableA 1.500 1.700(MMBT3906FW)B 0.750 0.850 Ideal for Medium Power Amplification andSTop ViewBC 0.700 0.900SwitchingD 0.250 0.350COLLECTORV GG 0.900 1.1003 3H 0.0

MMBT3904Z 200 mA, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 2 PACKAGING DIMENSION Millimet

MMBT3904T NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES Simplifies Circuit Design. We Declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking ShippingMMBT3904T MA 3000/Tape&ReelMillimeter Millimete

MMBT3906WPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESA suffix of "-C" specifies halogen & lead-freeSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min Max Complementary NPN Type Available(MMBT3904W) A 1.800 2.200 Ideal for Medium Power Amplification andB 1.150 1.350ASwitchingL C 0.800 1.000"Lead free is availab

MMBT3904WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min MaxA Complementary PNP Type AvailableLA 1.800 2.200(MMBT3906W)B 1.150 1.3503 Ideal for Medium Power Amplification andS C 0.800 1.000Top ViewBSwitching

MMBT3906FWPNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductFEATURESSOT-523 Epitaxial Planar Die ConstructionADim Min Max Complementary NPN Type AvailableL(MMBT3904FW) A 1.500 1.700 Ideal for Medium Power Amplification andB 0.750 0.850SSwitching Top ViewBC 0.700 0.900D 0.250 0.350COLLECTORV GG 0.900 1.10033H 0.00

MMBT3906Z -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-923 Collector current capability IC= -200mA Collector-emitter voltage VCEO= -40V. APPLICATION General switching and amplification. (Top View) MARKING Date code 3 PACKAGING DIMENSION Mi

MMBT3906 -200 mA, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Collector current capability IC=-200mA Collector-emitter voltage VCEO=-40V. APPLICATION AL General switching and amplification. 33Top ViewC BPACKAGING DIMENSION 11 2

MMBT3904ZW 200 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free WBFBP-03E FEATURES Collector current capability IC=200mA Collector-emitter voltage VCEO=40V. APPLICATION General switching and amplification. MARKING Millimeter Millimeter REF. REF. Min. Max. Min. Max.

MMBT3904Taiwan SemiconductorSmall Signal Product300mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin (Sn) lead finish with Nickel (Ni) underplate- Pb free version and RoHS compliant- Packing code with suffix "G" means green compound (halogen-free) SOT-23MECHANICAL DATA- Case

MMBT3906 Taiwan Semiconductor 350mW, PNP Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO -40 V High surge current capability VCEO -40 V Moisture sensitivity level: level 1, per J-STD-020 VEBO -5 V RoHS Compliant Halogen-free according to IEC 61249-2-21 I

MMBT3904LTaiwan SemiconductorSmall Signal Product300mW, NPN Small Signal TransistorFEATURES- Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin (Sn) lead finish with Nickel (Ni) underplate- Pb free version and RoHS compliant- Packing code with suffix "G" means green compound (halogen-free) SOT-23MECHANICAL DATA- Cas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT3906T TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available 1. BASE Also Available in Lead Free Version 2. EMITTER MARKING:3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emit

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate TransistorsMMBT3906M TRANSISTOR (PNP)SOT-723FEATURE33 Complementary to MMBT3904M Small Package1MARKING: 3N2MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 1. BASE2. EMITTERSymbol Parameter Value Unit3. COLLECTORVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors SOT-723 MMBT3904M TRANSISTOR (NPN) FEATURE Complementary to MMBT3906M Small Package MARKING: 1N 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted ) 3. COLLECTORSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT3906T Small Package MARKING:1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER V Collector-Emitter Voltage 40 V CEO

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Co

www.jscj-elec.com AD-MMBT3906 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT3906 series Plastic-Encapsulated Transistor AD-MMBT3906 series Transistor (PNP) FEATURES Complementary to AD-MMBT3904 series AEC-Q101 qualified MARKING 2A = Device code 2A X X = Date code Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBT3906 series MAXIM

Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3906WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -200 mAdcTHERMAL CHARACTERISTICS

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE112MMBT3904GH2EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSChar

Zowie Technology CorporationGeneral Purpose TransistorPNP SiliconCOLLECTOR33BASE11MMBT3906WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 VdcCollector-Base Voltage VCBO -40 VdcEmitter-Base Voltage VEBO -5.0 VdcCollector Current-Continuous IC -200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max. UnitoT

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productCOLLECTOR33BASE11MMBT3904WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3904WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCh

MMBT3904TRANSISTOR(NPN)SOT-23 FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction (3)C MARKING: 1AM 1AM(1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Curre

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3904( MMBT3904)MAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3906MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -40 Vdc-

MMBT3906T SOT-523 Transistor (PNP) 1. BASE SOT-5232. EMITTER 3. COLLECTOR Features Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:3N Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCo

MMBT3904 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VDimensions in inches and (millimeters)VCEO Collector-Emitter Vo

MMBT3904LT1 NPN SWITCHING TRANSISTOR1. BASE 2. EMITTER3. COLLECTORFEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min MaxA 2.70 3.10K B(MMBT3906). B 1.10 1.50C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 TypicalJDE 0.35 0.48 Collector-emitter Voltage VCEO=40V. GG 1.80 2.00H 0.02 0.1H

MMBT3906LT1 PNP General Purpose Transistor1. BASE 2. EMITTER3. COLLECTORFEATURES A SOT-23 Epitaxial planar die construction. Dim Min MaxA 2.70 3.10E Complementary NPN type available B 1.10 1.50K BC 1.0 Typical(MMBT3904). D 0.4 TypicalE 0.35 0.48J Collector Current Capability ICM =-200mA. DG 1.80 2.00GH 0.02 0.1 Low Voltage(Max:-40V).J 0.1 Typi

MMBT3906 SOT-23 Transistor(PNP)1. BASE 2. EMITTER SOT-233. COLLECTOR Features As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Em

MMBT3906TCOLLECTOR3General Purpose Transistor3PNP Silicon1 12BASEP b Lead(Pb)-Free2SC-89EMITTER(SOT-523F)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VCEOCollector-Base Voltage VCBO -40 VEmitter-Base Voltage VEBO -5.0 VCollector Current-Continuous ICmA-200Thermal CharacteristicsCharacteristics Symbol Max Unit(1)Total

MMBT3904COLLECTOR3General Purpose Transistor3NPN Silicon11BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (

MMBT3906EPNP General Purpose Transistor3211The MMBT3906E device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device.SOT-1123It is designed for general purpose amplifier applicationsand is housed in the SOT-1123 surface mount package.COLLECTORThis device is ideal for low-power surface mount applications3where board space is at a premium.FE

MMBT3904TGeneral Purpose NPN SiliconTransistor3COLLECTOR3P b Lead(Pb)-Free121BASESC-892SOT-523FEMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max Unit(1)Total

MMBT3906WCOLLECTOR3General Purpose Transistor3PNP Silicon1BASE122EMITTERSOT-323(SC-70)M aximum R atingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-200Thermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipati

MMBT3904WCOLLECTOR3General Purpose Transistor3NPN Silicon1BASE122EMITTERSOT-323(SC-70)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation TA=

MMBT3904ENPN General Purpose Transistor3211The MMBT3904E device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device.SOT-1123It is designed for general purpose amplifier applicationsand is housed in the SOT-1123 surface mount package.COLLECTORThis device is ideal for low-power surface mount applications3where board space is at a premium.FE

MMBT3906COLLECTOR3General Purpose Transistor3PNP Silicon11BASE2P b Lead(Pb)-FreeSOT-232EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage VCBO -40 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-200Thermal CharacteristicsCharacteristics Symbol Max Unit(1)Total Dev

FM120-M WILLASTHRUMMBT3906TT1General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize

FM120-M WILLAS MMBT3906DW1T1THRUDual Bias Resistor TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi

NPNMMBT3904WT1FM120-M WILLASTHRUPNPFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose Transistors MMBT3906WT1 SOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersNPN and PNP Silicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface

FM120-M WILLASMMBT3904DW1T1THRUDual General Purpose TransistorFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optim

FM120-M WILLASMMBT3904LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.RoHS product for packing code suffix "G", SOD-123H Low profile surfa

FM120-M WILLASTHRUMMBT3906LT1General Purpose BARRIER RECTIFIERS -20V- 200VTransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HPNP Silicon Low profile surface mounted application in order to

FM120-M WILLAS MMBT3946DW1T1THRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTheM

FM120-M WILLASTHRUMMBT3904TT1General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesNPN ocess de Batch prSiliconsign, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HFEATURE Low profile surface mounted application in

FM120-MWILLAS MMBT3904SLT1THRU SOT-923 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outline TRANSISTOR (NPN) Features FEATURES Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HSOT923 Lo

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.2 W (Tamb=25) 1. 3 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range Unit: mm TJ, Ts

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collecto

PNP PNPEPITAXIAL SILICON TRANSISTOR RMMBT3906 MAIN CHARACTERISTICS Package I 100mA C V 40V CEOP (SOT-23) 200mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit

SOT-23 Plastic-Encapsulate TransistorsFEATURESSOT-23 As complementary type, the PNP transistorMMBT3906 is Recommended Epitaxial planar die constructionMARKING:1AMMARKING:1AMMARKING:1AMMARKING:1AM1 BASEMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS2 EMITTERSymbol Parameter Value UnitsSymbol Parameter Va

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) FEATURES Complimentary to MMBT3904 MARKING:2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) FEATURES Complimentary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-

MMBT3904 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low current, Low voltage / Applications General purpose amplifier and switching. / Equivalent Circuit

MMBT3906 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h V FE CE(sat)High DC Current Gain, Low Collector to Emitter Saturation Voltage. / Applications General purpose amplifier and switching.

MMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 150 C OStorag

MMBT3906 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 200 mA

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 VEmitter Base Voltage VEBO 6 VCollector Current IC 600 mAPower Dissipation Ptot 350 mWOJunction Temperature Tj 150 C O

MMBT3904LTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes aPb-Free Lead Finish3Maximum Ratings1Rating Symbol Value Unit2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcSOT23Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdc3COLLECTORThermal Charact

MMBT3906LTGGeneral Purpose TransistorsPackage outlineFeatures We declare that the material of product compliance with RoHSrequirements.3Ordering Information1Device Marking Shipping2MMBT3906LTG 2A 3000/Tape & ReelSOT23Maximum Ratings3Rating Symbol Value UnitCOLLECTORCollector-Emitter Voltage VCEO -40 Vdc1Collector-Base Voltage VCBO -40 VdcBASEEmitt

SMD Type TransistorsPNP TransistorsMMBT3906T (KMBT3906T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Epitaxial Planar Die Construction2 1 Also Available in Lead Free Version Complementary to MMBT3904T30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter S

SMD Type TransistorsNPN TransistorsMMBT3904 (KMBT3904)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT39061 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 V

SMD Type TransistorsPNP TransistorsMMBT3906DW (KMBT3906DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Curren

SMD Type TransistorsPNP Transistors(KMBT3906-D)MMBT3906-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2 Complementary to MMBT3904-D +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Marking: 2A1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage

SMD Type TransistorsNPN TransistorsMMBT3904T (KMBT3904T)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Small Package2 1 Complementary to MMBT3906T30.30.05+0.10.5 -0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collec

SMD Type TransistorsPNP TransistorsMMBT3906W Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-40V Complementary to MMBT3904W1 Base2 Emitter3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Col

SMD Type TransistorsNPN TransistorsMMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle

SMD Type TransistorsPNP TransistorsMMBT3906 (KMBT3906)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2 Complementary to MMBT3904 +0.1+0.050.95-0.1 0.1 -0.01+0.11.9 -0.1 Marking: 2A1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V

SMD Type TransistorsNPN Transistors(KMBT3904-D)MMBT3904-DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features Complementary to MMBT3906-D1 2 Marking:1AM+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VC

SMD Type TransistorsNPN TransistorsMMBT3904DW (KMBT3904DW) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current -

MMBT3904NPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)225 mWattVOLTAGE 40 Volt POWER SOT-23FEATURES NPN epitaxial silicon, planar design0.120(3.04) Collector-emitter voltage VCE = 40V 0.110(2.80) Collector current IC = 200mA Transition frequency fT>300MHz @ IC=10mAdc,VCE=20Vdc,f=100MHz Lead free in compliance with EU RoHS 2.0 0.056(1.40) Gr

MMBT3904FN3NPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)DFN 3LPOWERVOLTAGE 40 Volt 250 mWatt0.042(1.05)FEATURES 0.037(0.95) NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V Collector current IC = 200mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)M

MMBT3904WNPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)SOT-323150 mWattVOLTAGE 40 Volt POWERFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V0.087(2.20) Collector current IC = 200mA0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35)0.045(1.15)MEC

MMBT3906PNP GENERAL PURPOSE SWITCHING TRANSISTOR40 Volt POWER 330 mWattVOLTAGEFEATURES0.120(3.04)0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC = -200mA Lead free in compliance with EU RoHS 2.0 0.056(1.40)0.047(1.20) Green molding compound as per IEC 61249 standard0.079(2.00) 0.008(0.20)0.07

General Purpose TransistorMMBT3906-G (PNP)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -As complementary type, the NPN30.056 (1.40)transistor MMBT3904-G is recommended0.047 (1.20)1 2Collector0.079 (2.00)0.006 (0.15)30.003 (0.08)0.071 (1.80)0.041 (1.05) 0.100 (2.55)0.035 (0.90) 0.089 (2.25)1Base0.004 (0.10) m

General Purpose TransistorMMBT3904-G (NPN)RoHS DeviceFeaturesSOT-23 -Epitaxial planar die construction0.120 (3.04)0.110 (2.80) -As complementary type, the PNP3transistor MMBT3904-G is recommended0.055 (1.40)0.047 (1.20)1 20.080 (2.04)0.070 (1.78)Collector0.007 (0.18)3 0.003 (0.08)0.044 (1.11)0.104 (2.64)0.035 (0.89)0.083 (2.10)1Base0.004 (0.100)

General Purpose TransistorMMBT3906-HF (PNP)RoHS DeviceHalogen FreeFeaturesSOT-23 -Epitaxial planar die construction0.119 (3.00)0.110 (2.80) -As complementary type, the NPN3transistor MMBT3906-HF is recommended0.056 (1.40)0.047 (1.20)1 20.079 (2.00)0.006 (0.15)Collector0.003 (0.08)0.071 (1.80)30.041 (1.05) 0.100 (2.55)0.035 (0.90) 0.089 (2.25)1Base

General Purpose TransistorMMBT3904-HF (NPN)RoHS DeviceHalogen FreeSOT-23Features0.118(3.00)0.110(2.80) -Epitaxial planar die construction3 -As complementary type, the PNP0.055(1.40)0.047(1.20)transistor MMBT3904-HF is recommended1 20.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.089(2.25)1Base0.004(0.10

Product specification NPN SWITCHING TRANSISTOR MMBT3904 FEATURES Epitaxial planar die construction. Pb Complementary PNP type available Lead-free (MMBT3906). Collector Current Capability I =200mA. CM Collector-emitter Voltage V =40V. CEO MSL 1 APPLICATIONS SOT-23 General switching and amplification ORDERING INFORMATION Type No. Marking Pac

GSTMMBT3904 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT3904F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3904F SOT-23 1AMOrdering Information GS P/NGSTMMBT3904 FPb Free Co

GSTMMBT3906 PNP General Purpose Transistor Product Description Features This device is designed as a general purpose Lead(Pb)-Free amplifier and switch. Packages & Pin Assignments GSTMMBT3906F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT3906F SOT-23 2A Ordering Information GS P/NGSTMMBT3906 FPb Free

MMBT3906T Plastic-Encapsulate TransistorsTRANSISTOR (PNP)SOT-523 FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Emitter Voltage VEB

MMBT3904NPN Switching TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitVCEO 40 VdcCollector-Emitter VoltageVCBO 60 VdcCollector-Base VoltageV 6.0 VdcEmitter-Base Voltage EBOIc 200 mAdcCollector Current-ContinuousTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERIST

MMBT3904MNPN General Purpose Amplifier Capable of 100m Watts of Power Dissipation and 200mA Ic Operating and Storage Junction Temperatures: -55 to 150 Small Outline Surface Mount Package RoHS compliant / Green EMCDevice Marking CodeMMBT3904M 1NMaximum Ratings Ta = 25 unless otherwise notedSymbol Parameter Value UnitsVCBOCollector-Base Voltage 60

MMBT3904T NPN Transistor32 Features1.Base Small Package2.Emitter3.Collector Complementary to MMBT3906T1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 200 mA Collecto

MMBT3904WNPN Silicon Epitaxial Planar Transistorfor switching and amplifier applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range

MMBT3906PNP Switching TransistorMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Rating UnitCollector-Emitter Voltage V -40 VdcCEOCollector-Base Voltage V -40 VdcCBOV -6.0 VdcEmitter-Base VoltageEBOCollector Current-Continuous Ic -200 mAdcTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARACTERISTICSTHERMAL CHARAC

RUMWUMW MMBT3904UMW MMBT3904UMW MMBT3904UMW MMBT3904UMW MMBT3904NPN Transistors Features SOT23 Small Package Complementary to MMBT3906TMARKING1. BASE 2. EMITTER 1AM3. COLLECTOR Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6

MMBT3904NPN Plastic-Encapsulate TransistorFeatures Pin ConfigurationsV CE = 40V3 COLLECTORI C = 0.2A f T =300MHZ @VCE=20V, IC=10mA,f=100MHz 1 BASE2 EMITTERGeneral Description As complementary type the PNP transistorMMBT3906 is recommended Epitaxial planar die constructio SOT-23 Plastic Package.Absolute Maximum Ratings @T =25 unless otherwise noted

MMBT3906Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS FeaturesSOT-23 As complementary type the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V1. BASE VCEO Collector-Emitter Vol

MMBT3904 TRANSISTOR (NPN)FEATURES Complementary to MMBT3906MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT23Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector Power Dissipation 200 mW RJA Thermal Resistance From Junction To Ambient 625 /WT

NPN SWITCHING TRANSISTOR Formosa MSMMBT3904 TRANSISTOR (NPN) FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT3906). Collector Current Capability Ic=200mA. Collector-emitter Voltage VCEO=40V. APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM

SOT-23 Plastic-Encapsulate Transistors Formosa MS TRANSISTOR (PNP) MMBT3906FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT3904). Low Current (Max:-100mA). Low Voltage(Max:-40v).APPLICATIONS Ideal for medium power amplification and switching SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3906

MMBT3904SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Complementary to MMBT3906 Marking: 1AMSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V CEBOI Collector Current 200 mA CP Collector Power Dissipation 200 mW CRJA Thermal Resistance From Junction

MMBT3906SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction Marking: 2ASymbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -40 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current -200 m

MMBT3904NPN SWITCHING TRANSISTORFEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT3906). SOT-23 Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 1 APPLICATIONS General switching and amplification ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RA

MMBT3906NP General Purpose TransistorFEATURES Epitaxial planar die construction. Complementary NPN type available (MMBT3904). Collector Current Capability ICM =-200mA. Low Voltage(Max:-40V). APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSYMBOL PARAMETER CONDITIONS Value UNIT

MMBT3904TRANSISTOR(NPN)FEA TURES Complementary Type The PNP Transistor MMBT3906 is Recommended Epitaxial Planar Die Construction MARKING:1AMSOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA PC Collector

MMBT3906TRANSISTOR(PNP)FEATURES SOT-23 ecommended Complementary Type The NPN Transistor MMBT3904 is R Epitaxial Planar Die Construction (3)C 1. BASE MARKING: 2A 2. EMITTER 2 A 3. COLLECTOR (1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 V VEBO Em

www.msksemi.comMMBT3904T-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)3MMBT3904T-MS1. BASEFEATURES 2. EMITTER1 Complementary to MMBT3906T3. COLLECTOR2 Small PackageSOT-523 MARKING: 1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 40 V

www.msksemi.comMMBT3904-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complementary to MMBT3906-MSMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE2. EMITTERSOT23 MARKING: 1AM3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

www.msksemi.comMMBT3906T-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)3MMBT3906T-MSFEATURES 1. BASE Epitaxial Planar Die Construction2. EMITTER Complementary NPN Type Available3. COLLECTOR1 Also Available in Lead Free Version2MARKING:3N SOT-523 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VC

www.msksemi.comMMBT3906-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES As complementary type, the NPN transistor MMBT3904-MS is Recommended Epitaxial planar die construction 1. BASE2. EMITTERMARKING: 2ASOT23 3. COLLECTORMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V

DATA SHEET MMBT3906 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -40 V CURRENT -200 mA FEATURES HIGH DC CURRENT GAIN LOW COLLECTOR-EMITTER SATURATION VOLTAGE LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE: SOT-23 TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208 APPROX. WEIGHT: 0.008 GRAMS CASE: SOT-23 ABSOLUTE MAXIMUM RATINGS AT TA=25C, UNLESS OTHERWISE

MMBT3904GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial Planar Transistor For Switching And Amplifier Applications Collector-emitter Voltage VCE=40V Collector Current IC=200mA MECHANICAL DATA C E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUM

MMBT3904 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 200 mA CPower Dissipation P

MMBT3906PNP Transistor Features SOT-23 For Switching and AF Amplifer Applications.(TO-236) Silicon Epitaxial Chip.1.Base 2.Emitter 3.CollectorMarking: 3E Absolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -I 200 mA CPowe

Jingdao Microelectronics co.LTD MMBT3904MMBT3904SOT-23NPN TRANSISTOR3FEATURES Complementary to MMBT3906 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEB

Jingdao Microelectronics co.LTD MMBT3906MMBT3906SOT-23PNP TRANSISTOR3FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO -40 V2.EMIT

MMBT3906Tsulate Transistors PNP Plastic-EncapFEATURES Epitaxial Planar Die Construction Complementary NPN Type Available Also Available in Lead Free Version MARKING:2ASOT-523 1. BASE 2. EMITTER 3. COLLECTOR=25 unless otherwise noted) MAXIMUM RATINGS (T aSymbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Emitter Voltage V

MMBT3904T NPN Plastic-Encapsulate Transistors FEATURES Complementary to MMBT3906T Small Package MARKING:MAMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOSOT523 V Collector-Emitter Voltage 40 V CEO 1. BASE V Emitter-Base Voltage 6 V EBO2. EMITTER I Collector Current 200 mA C3. COLL

MMBT3946DWDescriptionsSilicon PNP and NPN transistor in a SOT-363 Plastic Package.Features High DC Current Gain, Low Collector to Emitter Saturation Voltage. Applications General purpose amplifier and switching. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 9

MMBT3904KSOT-23 Plastic-Encapsulate Transistors TRANSISTOR(NPN)Features Power Dissipation of 200mW High Stability and High Reliability Mechanical Data Marking: 1AM SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Par

MMBT3904DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features Low current, Low voltage.Applications General purpose amplifier and switching. Equivalent Circuit PinningPIN 14Emitter PIN 25Base PIN 36Collector hFE Classifications & Marking See Marking Instructions. REV.081 of 6MMBT3904DW Absolute Maximum Ratings(Ta

TAK CHEONG SEMICONDUCTORSOT-523 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 2 VEBO Emitter-Base Voltage 6 V IC Collector Current 200 mA 1 Power Dissipation PD 200

TAK CHEONG SEMICONDUCTOR SOT-883 General Purpose Transistor NPN Silicon Surface Mount Plastic Package Green Product Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units 3 VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 2 IC Collector Current 200 mA 1 Power Dissipation PD

Integrated inOVP&OCP productsproviderMMBT3906SOT-23 Plastic-Encapsulate TransistorsSOT-23 Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

Integrated inOVP&OCP productsproviderMMBT3904SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Sm

MMBT3906 SOT-23 PNP Transistors32 1.Base2.Emitter1 3.CollectorFeatures Simplified outline(SOT-23) Complementary to MMBT3904 Marking: 2AAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 VEmitter - Base Voltage VEBO -5Collector Current - Continuous IC -0.2 ACollector Power D

MMBT3946DW SOT-363 NPN / PNP Silicon Epitaxial Planar Transistors6 5 4Q2Q11 2 31. Emitter 2. Base 3. Collector4. Emitter 5. Base 6. Collector Simplified outline(SOT-363)Q1 Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAQ2 Maximum Ratin

MMBT3904 SOT-23 NPN Transistors321.Base Features2.Emitter1 3.Collector Complementary to MMBT3906 Marking:1AM Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60 VCollector - Emitter Voltage VCEO 40 VEmitter - Base Voltage VEBO 6 VCollector Current - Continuous IC 0.2 ACollector Power Dis

MMBT3904TRANSISTORNPNTRANSISTORNPNTRANSISTORNPNTRANSISTORNPNTRANSISTORNPNFEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and SwitchingSOT-23 MARKING: 1AM 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Par

MMBT3904TGeneral Purpose Transistor NPN SiliconSurface Mount Plastic PackageFeatures Simplifies Circuit Design1. Base RoHS Compliant2. Emitter Green EMC3. CollectorMarking1NMaximum Ratings (T =25C unless otherwise noted)aSymbol Parameter Value UnitV Collector Base Voltage 60 VCBOV Collector Emitter Voltage 40 VCEOV Emitter Base Voltage 6 VEBO

MMBT3906SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) FEATURES Complimentary to MMBT3904 MARKING:2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -40 V VCEO Collector-Emitter Voltage -

MMBT3904 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT3906 Collector Current: Ic=200mAMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 200 mACollector P

MMBT3906 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT3904 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3906 ; Complementary to MMBT3906 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack

MMBT3906TMMBT3906TMMBT3906TMMBT3906TTRANSISTOR(PNP)MMBT39 0 6TSOT523FEATURES Epitaxial Planar Die Construction 1. BASE Complementary NPN Type Available 2. EMITTER Also Available in Lead Free Version 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector-Emitter Volta

MMBT3904AO3400SI2305MMBT3904 TRANSISTOR (NPN)FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching SOT-23 MARKING: 1AM 1BASE 2EMITTER 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 VVCEO Colle

MMBT3906MMMBT3906MMMBT3906MMMBT3906M TRANSISTOR (PNP)SOT-72333FEATURE Complementary to MMBT3904M Small Package121. BASEMARKING: 3N2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VIC Collector Current

MMBT3904MMMBT3904MMMBT3904MSOT-723 MMBT3904M TRANSISTOR (NPN)FEATURE Complementary to MMBT3906M Small Package1. BASEMARKING: 1N 2. EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted )Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuou

MMBT3904TMMBT3904TMMBT3904TTRANSISTOR(NPN)MMBT39 0 4TFEATURES SOT523 Complementary to MMBT3906T Small PackageMAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 200 mA CPC C

MMBT3906WMMBT3906WMMBT3906WMMBT3906WMMBT39 0 6W TRANSISTOR(PNP)for switching and amplifier applications SOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 200 mA Total Po

MMBT3904WMMBT3904WMMBT3904WMMBT3904WTRANSISTOR(NPN)MMBT39 0 4Wfor switching and amplifier applicationsSOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power

MMBT3904MMBT3906AO3400SI2305MMBT3906 TRANSISTORPNP FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER MARKING: 2A 3COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -40 VVCEO Collector-Emitter Voltage -40 V

RoHS COMPLIANT MMBT3906T PNP General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage: SOT-523 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 3N Maximum R

RoHS COMPLIANT MMBT3904 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:1AM Off Characteristics Item Symbol Unit Conditions ValueCollector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 40 Collector-Base Voltage VCBO V IC=10uAdc, IE=0 60 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0 Collec

RoHS COMPLIANT MMBT3904T NPN General Purpose Amplifier Features Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion Epoxy meets UL-94 V-0 flammability rating, halogen-free Mechanical Data ackage: SOT-523 P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking: 1N Maximum R

RoHS COMPLIANT MMBT3906 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking:2A Maximum Rating, (Ta=25 Unless otherwise specified)Item Symbol Unit ValueCollector-Emitter Voltage V V -40CEOCollector-Base Voltage V V -40 CBOEmitter-Base Voltage V V -5.0 EBOCollector Current, Continuous

TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comMMBT3904 NPN Silicon General Purpose Transistor for switching and amplifier applications. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C)Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mAPower Dis

MMBT3906T MMBT3906T SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3904 MMBT3904 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3906 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT3904 1AM . Maximum R

MMBT3906M MMBT3906M PNP General Purpose Transistor General description PNP General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO -40V Ic -200mA PC 100mW Complementary to MMBT3904M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 3N Absolute Maximum Ratings(Ta=25) Pa

MMBT3904M MMBT3904M NPN General Purpose Transistor General description NPN General Purpose Transistor FEATURES SOT-723 General Purpose Transistors. VCEO 40V Ic 200mA PC 100mW Complementary to MMBT3906M Small Outline Surface Mount Package. RoHS Compliant / Green EMC. Type MMBT3904M Marking 1N Absolute Maximum Ratings(Ta=25) Para

MMBT3904T MMBT3904T SOT-523 Silicon General Purpose Transistor (NPN) General description SOT-523 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3906W MMBT3906W SOT-323 Silicon General Purpose Transistor (PNP) General description SOT-323 Silicon General Purpose Transistor (PNP) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Parameter Symbol Value Unit Collector Base

MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3904C MMBT3904C SOT-883 Silicon General Purpose Transistor (NPN) General description SOT-883 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3906 MMBT3906 SOT-23 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT3904 Power Dissipation of 200mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT3906 2A . Maximum Ra

SOT-523 Plastic-Encapsulate Transistors SOT-523 MMBT3906T TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available 1. BASE Also Available in Lead Free Version 2. EMITTER MARKING:3N 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -40 VCollector-Base Voltage VCEO -40 VCollector

TRANSISTOR (NPN)FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6

SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR (NPN) FEATURES SOT523 Complementary to MMBT3906T Small Package MARKING:1N MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 60 V CBO2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR V Emitter-Base Voltage 6 V EBOI Colle

MMBT3906W PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 3NOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 40 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C O

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 1EOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStor

MMBT3906 TRANSISTORPNP FEATURES Complementary Type The NPN Transistor SOT-23 MMBT3904 is Recommended Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -40 VVCEO Collector-Emitter Voltage -40 VVEBO Emitter-Base Voltage -5 VI

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT3904MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 40 Vdc-Emitter-Base VoltageVEBO 6.0 Vdc-Co

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT3906MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -40 Vdc-Collector-Base VoltageVCBO -40 Vdc-Emitter-Base VoltageVEBO -6.0 Vdc-

MMBT3904NPN GENERAL PURPOSE SWITCHING TRANSISTOR40Volts POWER 225mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.2A.ansition frequency fT>300MHz @ TrIC=10mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

MMBT3906PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -40Volts POWER 225mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-40V.Collector current IC=0.2A.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Solderable per MIL-STD-750, Cmethod 2026 2AApprox. Weight: 0.008gra

MMBT3904BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT3906 Surface Mount deviceMECHANICAL DATA SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 60 VCBOCollec

MMBT3906BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBT3904 Surface Mount deviceMECHANICAL DATA SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V -40 VCBOColle

NPN MMBT3904MMBT3904 TRANSISTOR (NPN)FEATURES Complementary Type The PNP Transistor MMBT3906 is Recommended SOT-23 Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Volta

PNP MMBT3906MMBT3906 TRANSISTORPNP FEATURES Complementary Type The NPN Transistor SOT-23 MMBT3904 is Recommended Epitaxial Planar Die Construction 1BASE 2EMITTER 3COLLECTOR MARKING: 2A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO -40 VVCE

MMBT3904SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM SOT-23 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Vol

MMBT3906SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended SOT23 Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V 1. BASE VCEO Collector-Emitter Voltage -40 V 2. EM

YFSEMI ELECTRONSOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING: 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -

YFSEMI ELECTRONSOT-23 Plastic-Encapsulate Transistors MMBT3904 TRANSISTOR (NPN) SOT23 FEATURES Complementary to MMBT3906 MARKING:1AM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Voltage 6 V IC Coll

MMBT3904Silicon Epitaxial Planar Transistor(NPN)CEFeaturesHigh Collector CurrentBComplementary To MMBT3906SOT-23Excel lent HFE Li nea r l tyAbsolute Maximum Ratings*unless otherwise notedTA = 25CParameter Value UnitsSymbolV Collector-Base Voltage 60CBO VVCEO 40 VCollector-Emitter VoltageVEBO Emitter-Base Voltage6 VICmACollector Current -Continuo

isc Silicon NPN Transistor MMBT3904DESCRIPTIONLow Voltage UseUltra Super Mini Mold PackageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTelephony and professional communication equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 40 VC

isc Silicon PNP Power Transistors MMBT3906DESCRIPTIONCollector-Emitter Saturation Voltage-: V = -0.25V(Max.)@I = -10mACE(sat) CCollector-Emitter Breakdown Voltage- : V = -40V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust device performance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

MMBT3904NPN SWITCHING TRANSISTOR FEATURES Pb Epitaxial planar die construction.Lead-free Complementary PNP type available(MMBT3906). Collector Current Capability ICM =200mA. Collector-emitter Voltage VCEO=40V. MSL 3APPLICATIONS General switching and amplification SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT3904 1AM SOT-23 MAXIMUM RATING @ Ta=