MMBT3906L Todos los transistores

 ..1. Size:125K  onsemi
 mmbt3906l smmbt3906l.pdf

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Coll

 ..2. Size:1191K  wpmtek
 mmbt3906l mmbt3906h.pdf

Integrated in OVP&OCP products provider MMBT3906 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

 ..3. Size:540K  cn yfw
 mmbt3906 mmbt3906l mmbt3906h.pdf

MMBT3906 SOT-23 PNP Transistors 3 2 1.Base 2.Emitter 1 3.Collector Features Simplified outline(SOT-23) Complementary to MMBT3904 Marking 2A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.2 A Collector Power D

 ..4. Size:942K  cn zre
 mmbt3906l mmbt3906h.pdf

MMBT3906 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT3904 ; Complementary to MMBT3904 200mW; Power Dissipation of 200mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack

 ..5. Size:2543K  cn yfsemi
 mmbt3906l mmbt3906h.pdf

YFSEMI ELECTRON SOT-23 Plastic-Encapsulate Transistors MMBT3906 TRANSISTOR (PNP) SOT 23 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction 1. BASE MARKING 2A 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -

 0.1. Size:403K  diodes
 mmbt3906lp.pdf

MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data BVCEO > -40V Case X1-DFN1006-3 IC = -200mA High Collector Current Case Material Molded Plastic, "Green" Molding Compound. PD = 1000mW Power Dissipation UL Flammability Classification Rating 94V-0 0.60mm2 Package Footprint, 13 times Smaller than SOT23 Moisture Sensitivity Lev

 0.2. Size:453K  mcc
 mmbt3906l3.pdf

 0.3. Size:120K  onsemi
 mmbt3906lt1-d.pdf

MMBT3906LT1G General Purpose Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc 2 Collector-Base Voltage VCBO -40 Vdc EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous IC -200 mAdc

 0.4. Size:128K  onsemi
 mmbt3906lt1g.pdf

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features AEC-Q101 Qualified and PPAP Capable http //onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER

 0.5. Size:1670K  lge
 mmbt3906lt1.pdf

MMBT3906LT1 PNP General Purpose Transistor 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A SOT-23 Epitaxial planar die construction. Dim Min Max A 2.70 3.10 E Complementary NPN type available B 1.10 1.50 K B C 1.0 Typical (MMBT3904). D 0.4 Typical E 0.35 0.48 J Collector Current Capability ICM =-200mA. D G 1.80 2.00 G H 0.02 0.1 Low Voltage(Max -40V). J 0.1 Typi

 0.6. Size:355K  willas
 mmbt3906lt1.pdf

FM120-M WILLAS THRU MMBT3906LT1 General Purpose BARRIER RECTIFIERS -20V- 200V Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H PNP Silicon Low profile surface mounted application in order to

 0.7. Size:813K  shenzhen
 mmbt3906lt1.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT3906LT1 TRANSISTOR ( PNP) FEATURES As complementary type, the NPN transistor MMBT3904LT1 is Recommended Epitaxial planar die construction MARKING 2A MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collecto

 0.8. Size:1218K  first silicon
 mmbt3906ltg.pdf

MMBT3906LTG General Purpose Transistors Package outline Features We declare that the material of product compliance with RoHS requirements. 3 Ordering Information 1 Device Marking Shipping 2 MMBT3906LTG 2A 3000/Tape & Reel SOT 23 Maximum Ratings 3 Rating Symbol Value Unit COLLECTOR Collector-Emitter Voltage VCEO -40 Vdc 1 Collector-Base Voltage VCBO -40 Vdc BASE Emitt