MMBT4401L Todos los transistores

 ..1. Size:147K  onsemi
 mmbt4401l smmbt4401l.pdf

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

 ..2. Size:1544K  cn yongyutai
 mmbt4401l mmbt4401h.pdf

MMBT4401 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT4403 Collector Current Ic=0.6A Switching Transistor MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 60 V Collector-Base Voltage VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC 600 mA C

 0.1. Size:155K  onsemi
 mmbt4401lt1.pdf

MMBT4401LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 6

 0.2. Size:152K  onsemi
 mmbt4401lt1g.pdf

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

 0.3. Size:422K  willas
 mmbt4401lt1.pdf

FM120-M WILLAS MMBT4401LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers We declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.