MMBT4403M3T5G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT4403M3T5G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.64 W
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 0.6 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT-723
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MMBT4403M3T5G datasheet
mmbt4403m3t5g.pdf
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mmbt4403m3-d.pdf
MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO
mmbt4403m3.pdf
MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO
mmbt4403.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4403LT1/D Switching Transistor MMBT4403LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 40 Vdc SOT 23 (TO 236AB) Emitter Base Voltage V
mmbt4403k.pdf
November 2006 MMBT4403K tm PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dis
2n4403 mmbt4403.pdf
2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0
mmbt4403t.pdf
MMBT4403T PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary NPN Type Available (MMBT4401T) Case Material Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity Level 1 per J-S
mmbt4403.pdf
MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Type Available (MMBT4401) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Case material molded Plastic Green Compound Totally Lead-Free & Fully RoHS compliant (Notes
mmbt4403 sot-23.pdf
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4403 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Operating and Storage Junction Temperatures -55 to 150 Capable of 350mWatts of Power Dissipation PNP General Surface Mount SOT-23 Package Ic=-600mA Purpose Amplifier Lead Free Finish/RoHS Compli
mmbt4403wt1.pdf
MMBT4403WT1G Switching Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO --40 Vdc 3 Collector -- Base
mmbt4403lt1g.pdf
MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit
mmbt4403l smmbt4403l.pdf
MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Em
mmbt4403lt1.pdf
MMBT4403LT1G Switching Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous I
2n4403bu 2n4403tf 2n4403tfr 2n4403ta 2n4403tar mmbt4403.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mmbt4403lt3g.pdf
MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit
mmbt4403wt1g.pdf
MMBT4403WT1G Switching Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc 3 Collector-Base Voltage
mmbt4403.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose SOT-23 amplifier and switch requiring collector currents up to 500mA. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MMBT440
mmbt4403w.pdf
MMBT4403W PNP Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L Dim Min Max COLLECTOR A 1.800 2.200 3 S Top View B B 1.150 1.350 3 C 0.800 1.000 1 BASE D 0.300 0.400 V G 1 G 1.200 1.400 2 2 H 0.000 0.100 C EMITTER J 0.100 0.250 H J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symb
mmbt4403.pdf
MMBT4403 PNP Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 COLLECTOR A L 3 B 1.200 1.400 C 0.890 1.110 3 1 D 0.370 0.500 Top View S B BASE 1 2 G 1.780 2.040 3 H 0.013 0.100 V G 2 1 J 0.085 0.177 EMITTER 2 K 0.450 0.600 C L 0.890 1.020 H J D S 2.100 2.
mmbt4403.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base V
mmbt4403gh.pdf
Zowie Technology Corporation Switching Transistor PNP Silicon Lead free product Halogen-free type 3 3 COLLECTOR 1 1 BASE MMBT4403GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 40 Vdc Collector-Base Voltage VCBO - 40 Vdc Emitter-Base Voltage VEBO - 5.0 Vdc Collector Current-Continuous IC - 600 mAdc THERMAL CHARACTERISTICS Ch
mmbt4403.pdf
MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati
mmbt4403.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4403 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -40 Vdc -
mmbt4403.pdf
MMBT4403 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4403=2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Contin
mmbt4403.pdf
MMBT4403 COLLECTOR 3 Switching Transistor PNP Silicon 3 1 1 BASE 2 SOT-23 2 EMITTER M aximum R atings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1
mmbt4403wt1.pdf
FM120-M WILLAS THRU MMBT4403WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batc PNP etteh process design, excellent power dissipation offers Silicon b r reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to
mmbt4403lt1.pdf
FM120-M WILLAS MMBT4403LT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order t
mmbt4403.pdf
SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor MARKING MMBT4403=2T MARKING MMBT4403=2T MARKING MMBT4403=2T MARKING MMBT4403=2T SOT-23 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise not
mmbt4403.pdf
MMBT4403 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 500mA Collector currents up to 500 mA. / Applications General purpose amplifier and switch requiring. / Eq
mmbt4403.pdf
MMBT4403 PNP Silicon General Purpose Transistor . TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Total Device Dissipation FR-5 Board 1) Ptot 300 mW O Thermal Resistance Junction to Ambient R JA
mmbt4403w.pdf
SMD Type or SMD Type TransistICs PNP Transistors MMBT4403W (KMBT4403W) Features Switching transistors. Collector Current Capability IC=-600mA Collector Emitter Voltage VCEO=-40V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO -40 V Collector-base voltage VCBO -40 V Emitter-base voltage VEBO -5 V
mmbt4403.pdf
SMD Type Transistors PNP Transistors MMBT4403 (KMBT4403) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ideal for Medium Power Amplification and Switching Complementary NPN Type Available (MMBT4401) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll
mmbt4403.pdf
MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120(3.04) 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device MMBT4401 0.047(1.20) Lead free in compliance with EU RoHS 2011/65/EU directive 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.0
mmbt4403-g.pdf
GeneraI Purpose Transistors SMD Diodes SpeciaIist MMBT4403-G (PNP) RoHS Device SOT-23 Features 0.119(3.00) -Switching transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Marking 2T 1 2 0.006(0.15) 0.083(2.10) 0.002(0.05) Collector 0.066(1.70) 3 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 1 0.006(0.15) max Base 0.020(0.50) 0.007(0.20) min 0.013(0.35) 2
mmbt4403.pdf
Product specification PNP General Purpose Transistor MMBT4403 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT4401). Also available in lead free version. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORM
mmbt4403.pdf
R UMW UMW MMBT4403 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Curren
mmbt4403.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -40 V 3. COLLECTOR VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu
mmbt4403.pdf
MMBT4403 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) SOT- 23 Features Switching Transistor Marking 2T Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage V EBO -5 C I Collector Current -600 mA C P Collector Power Dissipation 300 mW C R JA Thermal Resistance From Juncti
mmbt4403.pdf
MMBT4403 PNP Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction Complementary NPN product available - MMBT4401 MSL Class 1 compatible APPLICATIONS General purpose in desktop & handheld systems Ideal for medium-power signal amplification and switching SOT-23 MAXIMUM RATING (@ T = 25 unless otherwise specified) A Parameter Sym
mmbt4403.pdf
MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati
mmbt4403.pdf
Jingdao Microelectronics co.LTD MMBT4403 MMBT4403 SOT-23 PNP TRANSISTOR 3 FEATURES Switching Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -40 V 2.EMITTER Collector Emitter Voltage VCEO -40 V 3.COLLECTOR Emitter Base Voltage VEBO -
mmbt4403.pdf
MMBT4403 SOT-23 PNP Transistors 3 Features Ideal for Medium Power Amplification and Switching 2 1.Base Complementary NPN Type Available (MMBT4401) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2T Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -4
mmbt4403l mmbt4403h.pdf
MMBT4403 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT4401 Collector Current Ic=0.6A Switching Transistor MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Colle
mmbt4403.pdf
MMBT3904 MMBT4403 AO3400 SI2305 MMBT4403 TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available SOT-23 (MMBT4401) Ideal for Medium Power Amplification and Switching 1 BASE 2 EMITTER MARKING 2T 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCE
mmbt4403.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBT4403 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2T Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -40 Collector
mmbt4403.pdf
MMBT4403 MMBT4403 SOT-23 Plastic-Encapsulate Switching Transistors (PNP) General description SOT-23 Plastic-Encapsulate Switching Transistors (PNP) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Marking 2T Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temper
mmbt4403.pdf
MMBT4403 PNP TRANSISTOR FEATURES Switching Transistor A M D e e a C E L1 L HE 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 mechanical data UNIT A C D E HE e M L L1 a Marking max 1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.0 0.55 0.36 mm (ref) (ref) min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15 Type number Marking code max 43 6 55 118 102 20 77 0.0 22 14 MMBT4403 2T mil (ref) (ref) min
mmbt4403.pdf
MMBT4403 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT4401 Switching Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit VCBO Collector
mmbt4403.pdf
Features SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 Maximum Ratings @ T = 25
Otros transistores... MMBT3904W, MMBT3906L, MMBT3906W, MMBT4126LT1, MMBT4401L, MMBT4401M3T5G, MMBT4401WT1, MMBT4403L, BC337, MMBT4403W, MMBT489, MMBT5087L, MMBT5088L, MMBT5089L, MMBT5401L, MMBT5550L, MMBT5551L
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