MMBT5087L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBT5087L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.05 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 40 MHz
Ganancia de corriente contínua (hFE): 250
Encapsulados: SOT23
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MMBT5087L datasheet
mmbt5087l.pdf
MMBT5087L Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Volt
mmbt5087lt3g.pdf
MMBT5087LT1G Low Noise Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -50 Vdc 2 EMITTER Emitter-Base Voltage VEBO -3.0 Vdc Collector Current - Continuous IC -50 mAdc THERMA
nsvmmbt5087lt1g.pdf
MMBT5087L Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring http //onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter V
mmbt5087lt1g.pdf
MMBT5087LT1G Low Noise Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -50 Vdc Collector-Base Voltage VCBO -50 Vdc 2 EMITTER Emitter-Base Voltage VEBO -3.0 Vdc Collector Current - Continuous IC -50 mAdc THERMA
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History: MMBT4403M3T5G
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