MMBT918L Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBT918L

Código: M3B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT23

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MMBT918L datasheet

 ..1. Size:97K  motorola
 mmbt918l.pdf pdf_icon

MMBT918L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT918LT1/D VHF/UHF Transistor MMBT918LT1 NPN Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 15 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc Collector Current Co

 0.1. Size:113K  onsemi
 mmbt918lt1-d.pdf pdf_icon

MMBT918L

MMBT918LT1G VHF/UHF Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc 2 EMITTER Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc THERMAL CHARA

 0.2. Size:75K  onsemi
 mmbt918lt1g.pdf pdf_icon

MMBT918L

MMBT918LT1G VHF/UHF Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 30 Vdc 2 EMITTER Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc 3 THERMAL CHARAC

 7.1. Size:748K  fairchild semi
 pn918 mmbt918.pdf pdf_icon

MMBT918L

PN918 MMBT918 C E C TO-92 B B E SOT-23 Mark 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 30 V

MOSTRAR MÁS

Otros transistores... MMBT589L, MMBT6427L, MMBT6428L, MMBT6429L, MMBT6517L, MMBT6520L, MMBT6521L, MMBT8099L, 2SD1047, MMBTA05L, MMBTA06L, MMBTA06WT1, MMBTA13L, MMBTA14L, MMBTA42L, MMBTA55L, MMBTA56L