MMBTH10L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBTH10L
Código: 3EM
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.04 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 650 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: SOT23
Búsqueda de reemplazo de MMBTH10L
- Selecciónⓘ de transistores por parámetros
MMBTH10L datasheet
mmbth10l mmbth10-4l smmbth10-4l nsvmmbth10l.pdf
MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M
mmbth10lt1rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI
mmbth10lt1g.pdf
MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http //onsemi.com NPN Silicon Features AEC-Q101 Qualified and PPAP Capable SOT-23 (TO-236) NSV Prefix for Automotive and Other Applications Requiring CASE 318 Unique Site and Control Change Requirements STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant*
mmbth10lt1g mmbth10-04lt1g nsvmmbth10lt1g.pdf
MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor www.onsemi.com NPN Silicon Features S and NSV Prefixes for Automotive and Other Applications SOT-23 (TO-236) Requiring Unique Site and Control Change Requirements; CASE 318 AEC-Q101 Qualified and PPAP Capable STYLE 6 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 M
Otros transistores... MMBTA42L, MMBTA55L, MMBTA56L, MMBTA56W, MMBTA63L, MMBTA64L, MMBTA70L, MMBTA92L, TIP35C, MMBTH10M3T5G, MMJT350T1, MMUN2111L, MMUN2112L, MMUN2113L, MMUN2114L, MMUN2115L, MMUN2116L
History: 2SB360
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement | 2sc984 replacement









