2N5580 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5580

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300 W

Tensión colector-base (Vcb): 90 V

Tensión colector-emisor (Vce): 70 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 60 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.4 MHz

Capacitancia de salida (Cc): 2000 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO66

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2N5580 datasheet

 9.1. Size:11K  semelab
 2n5583.pdf pdf_icon

2N5580

2N5583 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 9.2. Size:26K  semelab
 2n5583 1.pdf pdf_icon

2N5580

2N5583 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 9.3. Size:52K  microsemi
 2n5581 2n5582.pdf pdf_icon

2N5580

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 50 Vdc VCEO Collector-Base Voltage 75 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 800 mAdc IC Total Power Dissipation @ T = 250C (1) 0.5 W A

Otros transistores... 2N5560, 2N557, 2N5575, 2N5576, 2N5577, 2N5578, 2N5579, 2N558, 2N2907, 2N5581, 2N5582, 2N5583, 2N5583LP, 2N5584, 2N5587, 2N5588, 2N5589