MUN5135DW1 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN5135DW1

Código: 0M

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: SC88 SC70 SOT363

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MUN5135DW1 datasheet

 0.1. Size:94K  onsemi
 nsvmun5135dw1t1g.pdf pdf_icon

MUN5135DW1

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

 7.1. Size:171K  onsemi
 mun5111t1g mun5112t1g mun5113t1g mun5114t1g mun5115t1g mun5116t1g mun5130t1g mun5131t1g mun5132t1g mun5133t1g mun5134t1g mun5135t1g mun5136t1g mun5137t1g.pdf pdf_icon

MUN5135DW1

MUN5111T1G Series, SMUN5111T1G, NSVMUN5111T1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network PNP SILICON This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor BIAS RESISTOR Transistor (BRT) contains a single transistor with a

 7.2. Size:171K  lrc
 lmun5111t1g lmun5112t1g lmun5113t1g lmun5114t1g lmun5115t1g lmun5116t1g lmun5130t1g lmun5131t1g lmun5132t1g lmun5133t1g lmun5134t1g lmun5135t1g lmun5136t1g lmun5137t1g.pdf pdf_icon

MUN5135DW1

MOSTRAR MÁS

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