2N5588 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5588
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 300 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 80 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.5 MHz
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO114
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2N5588 datasheet
2n5583.pdf
2N5583 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
2n5583 1.pdf
2N5583 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
2n5581 2n5582.pdf
TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 50 Vdc VCEO Collector-Base Voltage 75 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 800 mAdc IC Total Power Dissipation @ T = 250C (1) 0.5 W A
Otros transistores... 2N558 , 2N5580 , 2N5581 , 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , D882P , 2N5589 , 2N559 , 2N5590 , 2N5591 , 2N5595 , 2N5596 , 2N5597 , 2N5598 .
History: 2SB1201S | 2SA1537E | BTNA14A3 | 2SA120
History: 2SB1201S | 2SA1537E | BTNA14A3 | 2SA120
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