2N5589 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N5589
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 3 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 175 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO128

Búsqueda de reemplazo de transistor bipolar 2N5589

2N5589 Datasheet (PDF)

9.1. Size:11K semelab
2n5583.pdf

2N5583Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar PNP Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

9.2. Size:26K semelab
2n5583 1.pdf

9.3. Size:52K microsemi
2n5581 2n5582.pdf

TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level JAN 2N5581 2N5582 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Unit Collector-Emitter Voltage 50 Vdc VCEO Collector-Base Voltage 75 Vdc VCBO Emitter-Base Voltage 6.0 Vdc VEBO Collector Current 800 mAdc IC Total Power Dissipation @ T = 250C (1) 0.5 W A

Otros transistores... 2N5580 , 2N5581 , 2N5582 , 2N5583 , 2N5583LP , 2N5584 , 2N5587 , 2N5588 , 2SC6090LS , 2N559 , 2N5590 , 2N5591 , 2N5595 , 2N5596 , 2N5597 , 2N5598 , 2N5599 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050