2N5591
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5591
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25
W
Tensión colector-base (Vcb): 36
V
Tensión colector-emisor (Vce): 18
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 4
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 175
MHz
Capacitancia de salida (Cc): 120
pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta:
TO128
Búsqueda de reemplazo de transistor bipolar 2N5591
2N5591
Datasheet (PDF)
9.1. Size:10K semelab
2n5599.pdf 
2N5599Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 80V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
9.2. Size:11K semelab
2n5597.pdf
2N5597Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specif
9.3. Size:117K jmnic
2n5598 2n5600 2n5602 2n5604.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou
9.4. Size:120K jmnic
2n5597 2n5599 2n5601 2n5603.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified ou
9.5. Size:127K inchange semiconductor
2n5598 2n5600 2n5602 2n5604.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66
9.6. Size:127K inchange semiconductor
2n5597 2n5599 2n5601 2n5603.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66
Otros transistores... 2N5583
, 2N5583LP
, 2N5584
, 2N5587
, 2N5588
, 2N5589
, 2N559
, 2N5590
, BF422
, 2N5595
, 2N5596
, 2N5597
, 2N5598
, 2N5599
, 2N56
, 2N560
, 2N5600
.
