NSS1C200 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSS1C200

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 120 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT223 TO261

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NSS1C200 datasheet

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nss1c200mz4 nsv1c200mz4.pdf pdf_icon

NSS1C200

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef

 0.2. Size:100K  onsemi
nss1c200mz4.pdf pdf_icon

NSS1C200

NSS1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

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nss1c200lt1.pdf pdf_icon

NSS1C200

NSS1C200LT1G 100 V, 3.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is import

 0.4. Size:129K  onsemi
nss1c200l nsv1c200l.pdf pdf_icon

NSS1C200

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

Otros transistores... NSS12100UW, NSS12100XV6T1G, NSS12200L, NSS12200WT1G, NSS12201L, NSS12500UW3, NSS12501UW3, NSS12601CF8, 2SA1015, NSS1C200L, NSS1C201LT1G, NSS1C201MZ4T1G, NSS20101JT1G, NSS20200L, NSS20201L, NSS20201MR6T1G, NSS20300MR6T1G