NSS40200L
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40200L
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.71
W
Tensión colector-emisor (Vce): 40
V
Corriente del colector DC máxima (Ic): 4
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 250
Paquete / Cubierta:
SOT23
Búsqueda de reemplazo de transistor bipolar NSS40200L
NSS40200L
Datasheet (PDF)
..1. Size:86K onsemi
nss40200l nsv40200l.pdf 
NSS40200L, NSV40200L40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is im
..2. Size:126K onsemi
nss40200l.pdf
NSS40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
0.1. Size:127K onsemi
nss40200lt1g.pdf
NSS40200LT1G,NSV40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-40 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable
7.1. Size:86K onsemi
nss40201lt1g nsv40201lt1g.pdf
NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRA
7.2. Size:126K onsemi
nss40201l.pdf
NSS40201LT1G40 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.3. Size:106K onsemi
nss40201lt1g.pdf
NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat)
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
