NSS40301 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSS40301
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 3 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT223 TO261

Búsqueda de reemplazo de transistor bipolar NSS40301

NSS40301 Datasheet (PDF)

0.1. Size:199K onsemi
nss40301mdr2g.pdf

DATA SHEETwww.onsemi.comDual Matched 40 V, 6.0 A,40 VOLTS6.0 AMPSLow VCE(sat) NPN TransistorNPN LOW VCE(sat) TRANSISTOREQUIVALENT RDS(on) 44 mWNSS40301MDR2GThese transistors are part of the onsemi e2PowerEdge family of LowVCE(sat) transistors. They are assembled to create a pair of devicesCOLLECTOR COLLECTORhighly matched in all parameters, including ultra low saturation

0.2. Size:106K onsemi
nss40301md.pdf

NSS40301MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) NPN TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn onhttp://onsemi.comvoltage.Typical applications

0.3. Size:92K onsemi
nss40301mz4.pdf

NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic

0.4. Size:88K onsemi
nss40301mz4t1g.pdf