NSS40302PD
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40302PD
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.576
W
Tensión colector-emisor (Vce): 40
V
Corriente del colector DC máxima (Ic): 6
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOIC-8
Búsqueda de reemplazo de transistor bipolar NSS40302PD
NSS40302PD
Datasheet (PDF)
0.1. Size:92K onsemi
nss40302pdr2g.pdf
NSS40302PDR2GComplementary 40 V, 6.0 A,Low VCE(sat) TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedwww.onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important
5.1. Size:119K onsemi
nss40302p.pdf
NSS40302PDR2GComplementary 40 V, 6.0 A,Low VCE(sat) TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is import
7.1. Size:106K onsemi
nss40300md.pdf
NSS40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn on http://onsemi.comvoltage.40 VOLTSTypical appl
7.2. Size:199K onsemi
nss40301mdr2g.pdf
DATA SHEETwww.onsemi.comDual Matched 40 V, 6.0 A,40 VOLTS6.0 AMPSLow VCE(sat) NPN TransistorNPN LOW VCE(sat) TRANSISTOREQUIVALENT RDS(on) 44 mWNSS40301MDR2GThese transistors are part of the onsemi e2PowerEdge family of LowVCE(sat) transistors. They are assembled to create a pair of devicesCOLLECTOR COLLECTORhighly matched in all parameters, including ultra low saturation
7.3. Size:159K onsemi
nss40300mz4.pdf
NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
7.4. Size:89K onsemi
nss40300mz4t1g.pdf
NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
7.5. Size:106K onsemi
nss40301md.pdf
NSS40301MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) NPN TransistorThese transistors are part of the ON Semiconductor e2PowerEdgefamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra lowsaturation voltage VCE(sat), high current gain and Base/Emitter turn onhttp://onsemi.comvoltage.Typical applications
7.6. Size:92K onsemi
nss40301mz4.pdf
NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic
7.7. Size:104K onsemi
nss40300d.pdf
NSS40300DDR2GDual 40 V, 6.0 A, LowVCE(sat) PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.
7.8. Size:88K onsemi
nss40301mz4t1g.pdf
NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic
7.9. Size:192K onsemi
nss40300ddr2g.pdf
NSS40300DDR2GDual 40 V, 6.0 A, LowVCE(sat) PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturationvoltage (VCE(sat)) and high current gain capability. These are designedhttp://onsemi.comfor use in low voltage, high speed switching applications whereaffordable efficient energy control is important.
7.10. Size:132K onsemi
nss40300mdr2g.pdf
NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A
7.11. Size:89K onsemi
nss40300mz4t3g.pdf
NSS40300MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where PNP TRANSISTORaffordable effic
7.12. Size:219K onsemi
nss40300mdr2g nsv40300mdr2g.pdf
NSS40300MDR2G,NSV40300MDR2GDual Matched 40 V, 6.0 A,Low VCE(sat) PNP TransistorThese transistors are part of the ON Semiconductor e2PowerEdgehttp://onsemi.comfamily of Low VCE(sat) transistors. They are assembled to create a pairof devices highly matched in all parameters, including ultra low40 VOLTSsaturation voltage VCE(sat), high current gain and Base/Emitter turn on6.0 A
7.13. Size:88K onsemi
nss40301mz4t3g.pdf
NSS40301MZ4Bipolar Power Transistors40 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation http://onsemi.comvoltage (VCE(sat)) and high current gain capability. These are designedfor use in low voltage, high speed switching applications where NPN TRANSISTORaffordable effic
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