NSS40500UW3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NSS40500UW3
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1.5 W
   Tensión colector-emisor (Vce): 40 V
   Corriente del colector DC máxima (Ic): 6 A

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: WDFN-3

Búsqueda de reemplazo de transistor bipolar NSS40500UW3

NSS40500UW3 Datasheet (PDF)

0.1. Size:108K onsemi
nss40500uw3t2g.pdf

NSS40500UW3T2G40 V, 6.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is impor

7.1. Size:80K onsemi
nss40501uw3t2g.pdf

NSS40501UW3T2G40 V, 7.0 A, Low VCE(sat)NPN TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

7.2. Size:163K onsemi
nss40501uw3 nsv40501uw3.pdf

NSS40501UW3,NSV40501UW340 V, 5.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy contr

7.3. Size:79K onsemi
nss40501uw3-d.pdf