NST847BPDP6T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NST847BPDP6T5G
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.42 W
Tensión colector-emisor (Vce): 45 V
Corriente del colector DC máxima (Ic): 0.1 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT-963
Búsqueda de reemplazo de transistor bipolar NST847BPDP6T5G
NST847BPDP6T5G Datasheet (PDF)
nst847bpdp6t5g.pdf
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inwww.onsemi.comone package, this device is ideal for low-power surface mo
nst847bpdp6.pdf
NST847BPDP6T5GDual ComplementaryGeneral Purpose TransistorThe NST847BPDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inhttp://onsemi.comone package, this device is ideal for low-power surface
nst846bmx2 nst847amx2 nst847bmx2.pdf
DATA SHEETwww.onsemi.comCOLLECTORGeneral Purpose3Transistors1BASENPN Silicon2NST846BMX2,EMITTERNST847AMX2,NST847BMX2 3Features1 Moisture Sensitivity Level: 12 ESD Rating - Human Body Model: > 4000 VX2DFN3 (1.0x0.6)ESD Rating - Machine Model: > 350 VCASE 714AC These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RA
nst847bf3.pdf
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst847bf3t5g.pdf
NST847BF3T5GNPN General PurposeTransistorThe NST847BF3T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563/SOT-963 three-leaded device. It isdesigned for general purpose amplifier applications and is housed inhttp://onsemi.comthe SOT-1123 surface mount package. This device is ideal forlow-power surface mount applications where board space is at aCOLLECTORpremium.3
nst847bdp6t5g.pdf
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mount www.onsemi.comapplications
nst847bdp6.pdf
NST847BDP6T5GDual General PurposeTransistorThe NST847BDP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
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