PCP1203 Todos los transistores

 

PCP1203 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PCP1203
   Código: QJ
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 500 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: PCP
     - Selección de transistores por parámetros

 

PCP1203 Datasheet (PDF)

 ..1. Size:267K  sanyo
pcp1203.pdf pdf_icon

PCP1203

PCP1203Ordering number : ENA1348SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorPCP1203DC / DC Converter ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers.Features Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage.

 ..2. Size:379K  onsemi
pcp1203.pdf pdf_icon

PCP1203

Ordering number : ENA1348APCP1203Bipolar Transistorhttp://onsemi.com( )30V, 1.5A, Low VCE sat , NPN Single PCPApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High speed switching High a

 8.1. Size:384K  sanyo
pcp1208.pdf pdf_icon

PCP1203

PCP1208Ordering number : ENA1836SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorPCP1208LED Back LightFeatures VCEO=200V, IC=0.7A High allowable power dissipation Halogen free compliance Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3ASpecifications at Ta=25C

 8.2. Size:379K  onsemi
pcp1208.pdf pdf_icon

PCP1203

Ordering number : ENA1836BPCP1208Bipolar Transistor http://onsemi.com200V, 0.7A Low VCE(sat) NPN Single PCPFeatures VCEO=200V, IC=0.7A High allowable power dissipation Halogen free compliance Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3ASpecificationsAbsolute Maximum Ratings at Ta=25

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SC5018 | 2SC3552 | 2SA715F | BU931ZP | ESM2894 | 2SC2408 | 2SD1074

 

 
Back to Top

 


 
.