BC868-25 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BC868-25
Código: CDC
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 32 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40 MHz
Capacitancia de salida (Cc): 22 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar BC868-25
BC868-25 Datasheet (PDF)
bcp68 bcp68-25 bc868 bc868-25 bc68pa bc68-25pa.pdf
BCP68; BC868; BC68PA20 V, 2 A NPN medium power transistorsRev. 8 18 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP68 SOT223 SC-73 - BCP69BC868 SOT89 SC-62 TO-243 BC869BC68PA SO
bc868 bc868-10 bc868-16 bc868-25.pdf
BC868Plastic-Encapsulate NPN TransistorsEncapsulate NPN Transistors FEATURES High current1A SOT-89PD Power Dissipation:500mW MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 32 V2. COLLECTOR VCEO Collector-Emitter Voltage 20 V3. EMITTER VEBO Emitter-Base Voltage 5 V IC Collector Current -Cont
bc868-10 bc868-16.pdf
BC868TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage 32 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mWTJ Junction Tempe
bc868.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109BC868NPN medium power transistor; 20 V, 1 AProduct data sheet 2004 Nov 08Supersedes data of 2003 Dec 02NXP Semiconductors Product data sheetNPN medium power transistor; BC86820 V, 1 AFEATURES QUICK REFERENCE DATA High currentSYMBOL PARAMETER MIN. MAX. UNIT Two current gain selectionsVCEO collector-e
bc868 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109BC868NPN medium power transistor1999 Apr 08Product specificationSupersedes data of 1998 Jul 16Philips Semiconductors Product specificationNPN medium power transistor BC868FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 20 V).1 emitter2 collectorAPPLICATIONS3 base Genera
bc868.pdf
BC868TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage 32 VVCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 500 mWTJ Junction Tempe
bc868 sot-89.pdf
BC868 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR SOT-893. EMITTER 4.6B4.41.61.81.41.4Features2.64.25High current 2.43.75Low voltage 0.8MIN0.530.40MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.480.442x)0.13 B0.35 0.371.53.0Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage
bc868.pdf
FM120-M WILLASTHRUBC868 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage oSOT-89 utlineTRANSISTOR (NPN) Features BatcFEATURES teh process design, excellent power dissipation offers bet r reverse leakage current and thermal resistance.SOD-123H High current
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
