BC869-16 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC869-16

Código: CGC_CHC

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.35 W

Tensión colector-base (Vcb): 32 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 28 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT89

 Búsqueda de reemplazo de BC869-16

- Selecciónⓘ de transistores por parámetros

 

BC869-16 datasheet

 ..1. Size:620K  nxp
bcp69 bcp69-16 bcp69-25 bc869 bc869-16 bc869-25 bc69pa bc69-16pa bc69-25pa.pdf pdf_icon

BC869-16

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 ..2. Size:372K  cn shikues
bc869 bc869-16 bc869-25.pdf pdf_icon

BC869-16

BC869 PNP Medium Power Transistor PNP Medium Power Transistor Features High current. Three current gain selections. 1.2 W total power dissipation. *1.Refer to SOT89 standard mounting conditions. *2.Device mounted on an FR4 printed-circuit board, single circuit board, single-sided copper, tin-plated footprint. *3.Device mounted on an FR4 printed-circuit board, single plated, mou

 9.1. Size:170K  philips
bc869.pdf pdf_icon

BC869-16

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product data sheet 2004 Nov 08 Supersedes data of 2003 Dec 02 NXP Semiconductors Product data sheet PNP medium power transistor; BC869 20 V, 1 A FEATURES QUICK REFERENCE DATA High current SYMBOL PARAMETER MIN. MAX. UNIT Three current gain selections VCEO collector

 9.2. Size:48K  philips
bc869 4.pdf pdf_icon

BC869-16

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1998 Jul 16 Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 20 V). 1 emitter 2 collector APPLICATIONS 3 base Low vo

Otros transistores... BC848W, BC856AT, BC856BT, BC856S, BC856W, BC857W, BC858W, BC868-25, BD136, BC869-25, BCP68-25, BCP69-16, BCP69-25, BCW61B, BCW61C, BF820W, BF824W