BFG540W Datasheet. Equivalente

 ..1. Size:412K  philips
 bfg540w wx wxr.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 04 NXP Semiconductors Product specification BFG540W NPN 9 GHz wideband transistor BFG540W/X; BFG540W/XR FEATURES MARKING High power gain TYPE NUMBER CODE lfpage Low noise figure 4 3 BFG540W N9 High transition

 ..2. Size:130K  philips
 bfg540w bfg540wx bfg540wxr 4.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 04 Philips Semiconductors Product specification BFG540W NPN 9 GHz wideband transistor BFG540W/X; BFG540W/XR FEATURES MARKING High power gain TYPE NUMBER CODE fpage Low noise figure 4 3 BFG540W N9 High transitio

 8.1. Size:312K  philips
 bfg540 x xr n.pdf

BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new lin

 8.2. Size:132K  philips
 bfg540 bfg540x bfg540xr 4.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Product specification 2000 May 23 Supersedes data of 1997 Dec 03 Philips Semiconductors Product specification BFG540; BFG540/X; NPN 9 GHz wideband transistor BFG540/XR FEATURES PINNING handbook, 2 columns 43 High power gain PIN DESCRIPTION Low noise figure BFG540 (Fig.1) Code N

 8.3. Size:209K  inchange semiconductor
 bfg540 v2.pdf

isc Silicon NPN RF Transistor BFG540 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. 21 @V = 8 V,I = 40 mA,f = 900 MHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. A

 8.4. Size:376K  inchange semiconductor
 bfg540.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor BFG540 DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz 21 CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear bro

 8.5. Size:353K  inchange semiconductor
 bfg540-x.pdf

isc Silicon NPN RF Transistor BFG540/X DESCRIPTION Low Noise Figure NF = 1.3 dB TYP. @V = 8 V, I = 10 mA, f = 900 MHz CE C High Gain S 2 =16dB TYP. @V = 8 V,I = 40 mA,f = 900 MHz 21 CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. AB