BUJ106A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

DISCRETE SEMICONDUCTORSDATA SHEETBUJ106ASilicon Diffused Power TransistorProduct specification March 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ106A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications,

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ106AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100AT GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended foruse in compact fluorescent lamps, low power electronic lighting ballasts and similar high frequency converters andinverters.QUICK REFERENCE DATASYMBOL PARAMETER CONDIT

DISCRETE SEMICONDUCTORSDATA SHEETBUJ103AXSilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting balla

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelopeintended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCE

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighting ballast applications, converters, inverters, switchingregulators, motor control systems, etc.QUICK REFERENCE

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lighting ballasts, converters and inverters, etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVC

BUJ103ASilicon diffused power transistorRev. 03 3 March 2005 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Motor control

BUJ105ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC converters Inverters Moto

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended foruse in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYMBOL PARAM

Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ101A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMET

BUJ103ADSilicon diffused power transistorRev. 01 14 December 2004 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428(D-PAK) surface mounted package.1.2 Features Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC converters Inverters Mot

DISCRETE SEMICONDUCTORSDATA SHEETBUJ103ASilicon Diffused Power TransistorAugust 1998Product specificationPhilips Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application

BUJ100LRNPN power transistorRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.1.2 Features and benefits Fast switching High voltage capability of 700 V1.3 Applications Compact fluorescent lamps (CFL) Inverters Electronic

DISCRETE SEMICONDUCTORSDATA SHEETBUJ103AXSilicon Diffused Power TransistorProduct specification August 2018WeEn Semiconductors Product specificationSilicon Diffused Power Transistor BUJ103AXGENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast a

DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ABSilicon Diffused Power TransistorProduct specification October 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105AB GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in SOT404 (D2-PAK) surface-mountpackage intended for use in high frequency electronic lighti

DISCRETE SEMICONDUCTORSDATA SHEETBUJ100Silicon Diffused Power TransistorProduct specification September 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ100 GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in the TO92 envelope intended for usein compact fluorescent lamps and low power electronic lig

BUJ103ASilicon diffused power transistorRev.05 - 29 March 2018 Product data sheet1. General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78(TO-220AB) plastic package.2. Features and benefits Low thermal resistance Fast switching3. Applications Inverters Motor control systems Electronic lighting ballasts

BUJ105ADSilicon diffused power transistorRev. 4 13 July 2018 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballast DC-to-DC conv

DISCRETE SEMICONDUCTORSDATA SHEETBUJ105ASilicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast application

BUJ103ADSilicon diffused power transistorRev. 3 18 October 2016 Product data sheet1. Product profile1.1 General descriptionHigh-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 (D-PAK) surface mounted package.1.2 Features and benefits Low thermal resistance Fast switching1.3 Applications Electronic lighting ballasts DC-to-DC

BUJ100LRNPN power transistor3 October 2016 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)plastic package.2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses3. Applications Compact fluorescent lamps (CFL) Electronic lig