BUJD103AD Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUJD103AD

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 12.5

Encapsulados: DPAK

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BUJD103AD datasheet

 ..1. Size:274K  nxp
 bujd103ad.pdf pdf_icon

BUJD103AD

BUJD103AD NPN power transistor with integrated diode Rev. 02 6 October 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Integrated anti-parallel E-C dio

 ..2. Size:340K  cn ween semi
 bujd103ad.pdf pdf_icon

BUJD103AD

BUJD103AD NPN power transistor with integrated diode 11 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti- parallel E-C diode in a SOT428 (DPAK) surface mountable plastic package. 2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C di

 8.1. Size:170K  nxp
 bujd105ad.pdf pdf_icon

BUJD103AD

BUJD105AD NPN power transistor with integrated diode Rev. 01 8 May 2009 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package. 1.2 Features and benefits Fast switching Very low switching and conduction

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