BUJD203A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUJD203A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 850 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 12.5
Paquete / Cubierta: TO220AB
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BUJD203A Datasheet (PDF)
bujd203a.pdf
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BUJD203ANPN power transistor with integrated diodeRev. 02 2 December 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.1.2 Features and benefits Fast switching Integrated anti-parallel E-C diode High
bujd203a.pdf
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BUJD203ANPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode Very low
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BUJD203ADNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.1.2 Features and benefits Fast switching Surface-mountable package H
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BUJD203AXNPN power transistor with integrated diodeRev. 01 27 September 2010 Product data sheet1. Product profile1.1 General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.1.2 Features and benefits Fast switching Isolated package High voltage capa
bujd203ad.pdf
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BUJD203ADNPN power transistor with integrated diode23 July 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode
bujd203ax.pdf
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BUJD203AXNPN power transistor with integrated diode9 October 2018 Product data sheet1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT186A (TO220F) "full pack" plastic package.2. Features and benefits Fast switching High voltage capability Integrated anti-parallel E-C diode
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .