2N561 Todos los transistores

 ..1. Size:317K  rca
 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf

 0.1. Size:11K  semelab
 2n5613.pdf

2N5613 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.2. Size:11K  semelab
 2n5619.pdf

2N5619 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.3. Size:11K  semelab
 2n5617.pdf

2N5617 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

 0.4. Size:11K  semelab
 2n5611.pdf

2N5611 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar PNP Device. 1 2 VCEO = 100V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 0.5. Size:113K  jmnic
 2n5606 2n5608 2n5610 2n5612.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66)

 0.6. Size:126K  jmnic
 2n5605 2n5607 2n5609 2n5611.pdf

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66)

 0.7. Size:127K  inchange semiconductor
 2n5606 2n5608 2n5610 2n5612.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol

 0.8. Size:118K  inchange semiconductor
 2n5613 2n5615 2n5617 2n5619.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol

 0.9. Size:50K  inchange semiconductor
 2n5610.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5610 DESCRIPTION DC Current Gain- hFE= 70-200@IC= 2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to Type 2N5609 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABSO

 0.10. Size:126K  inchange semiconductor
 2n5612a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5612A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absol

 0.11. Size:127K  inchange semiconductor
 2n5605 2n5607 2n5609 2n5611.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol

 0.12. Size:36K  inchange semiconductor
 2n5619.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5619 DESCRIPTION DC Current Gain- hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to Type 2N5620 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. AB

 0.13. Size:129K  inchange semiconductor
 2n5611a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION With TO-66 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolu

 0.14. Size:118K  inchange semiconductor
 2n5614 2n5616 2n5618 2n5620.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

 0.15. Size:305K  inchange semiconductor
 2n5611.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N5611 DESCRIPTION DC Current Gain- hFE= 30-90@IC= -2.5A Wide Area of Safe Operation Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to Type 2N5612 APPLICATIONS Designed for use in high frequency power amplifiers, audio power amplifier and drivers. ABS