BUT11APX-1200 Todos los transistores

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BUT11APX-1200 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUT11APX-1200

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 32 W

Tensión colector-emisor (Vce): 1200 V

Corriente del colector DC máxima (Ic): 6 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 25

Empaquetado / Estuche: SOT186A

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BUT11APX-1200 Datasheet (PDF)

2.1. but11apx.pdf Size:60K _update

BUT11APX-1200
BUT11APX-1200

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

2.2. but11apx.pdf Size:61K _philips

BUT11APX-1200
BUT11APX-1200

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations

2.3. but11apx.pdf Size:226K _inchange_semiconductor

BUT11APX-1200
BUT11APX-1200

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11APX DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage VBE= 0 1000 V VCEO Collector-Emitter Voltage 450 V V

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BUT11APX-1200
  BUT11APX-1200
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